We report on ferromagnetic characteristics of Zn1- xMnxO thin films grown on Al2O3 substrates by using pulsed laser deposition. The effects of oxygen pressure on the ferromagnetism in the Mn-doped ZnO thin films are discussed. The carrier concentration was found to be controlled by varying the oxygen pressure. By decreasing oxygen pressure, the films exhibited increases in both the lattice constant and fundamental band gap energy. Large magnetoresistance (MR) was observed in the film grown at 700°C, especially over 10% in the positive MR. The results indicate the spin splitting caused by strong s-d exchange coupling between the conducting carriers and localized spins of Mn ions.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2006 Jan 18|
|Event||Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - |
Duration: 2005 Jul 3 → 2005 Jul 8
Bibliographical noteFunding Information:
This work was supported by the Government (R01-2004-000-10195-0(2004)) from the Basic Research Program of KOSEF (Korea Science and Engineering Foundation).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry