Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires

Ungkil Kim, Tae Eon Park, Ilsoo Kim, Han Kyu Seong, Myeong Ha Kim, Joonyeon Chang, Jae Gwan Park, Heon Jin Choi

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7 Citations (Scopus)


Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction.

Original languageEnglish
Article number123903
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2009

Bibliographical note

Funding Information:
This research was supported by a grant from the National Research Laboratory (Grant No. R0A-2007-000-20075-0), Nano R&D (Grant No. 2009-0082724) and Pioneer research program for converging technology (Grant No. 2009-008-1529) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science & Technology.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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