Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires

Ungkil Kim, Tae Eon Park, Ilsoo Kim, Han Kyu Seong, Myeong Ha Kim, Joonyeon Chang, Jae Gwan Park, Heon Jin Choi

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Abstract

Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction.

Original languageEnglish
Article number123903
JournalJournal of Applied Physics
Volume106
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, U., Park, T. E., Kim, I., Seong, H. K., Kim, M. H., Chang, J., Park, J. G., & Choi, H. J. (2009). Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires. Journal of Applied Physics, 106(12), [123903]. https://doi.org/10.1063/1.3267047