Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires

Ungkil Kim, Tae Eon Park, Ilsoo Kim, Han Kyu Seong, Myeong Ha Kim, Joonyeon Chang, Jae Gwan Park, Heon Jin Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction.

Original languageEnglish
Article number123903
JournalJournal of Applied Physics
Volume106
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1

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nanowires
anisotropy
high aspect ratio
tensile stress
dichroism
magnetic moments
orbitals
single crystals
ions
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Ungkil ; Park, Tae Eon ; Kim, Ilsoo ; Seong, Han Kyu ; Kim, Myeong Ha ; Chang, Joonyeon ; Park, Jae Gwan ; Choi, Heon Jin. / Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires. In: Journal of Applied Physics. 2009 ; Vol. 106, No. 12.
@article{b2fcd96158554373a06fa491c6e2faea,
title = "Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires",
abstract = "Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction.",
author = "Ungkil Kim and Park, {Tae Eon} and Ilsoo Kim and Seong, {Han Kyu} and Kim, {Myeong Ha} and Joonyeon Chang and Park, {Jae Gwan} and Choi, {Heon Jin}",
year = "2009",
month = "12",
day = "1",
doi = "10.1063/1.3267047",
language = "English",
volume = "106",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires. / Kim, Ungkil; Park, Tae Eon; Kim, Ilsoo; Seong, Han Kyu; Kim, Myeong Ha; Chang, Joonyeon; Park, Jae Gwan; Choi, Heon Jin.

In: Journal of Applied Physics, Vol. 106, No. 12, 123903, 01.12.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires

AU - Kim, Ungkil

AU - Park, Tae Eon

AU - Kim, Ilsoo

AU - Seong, Han Kyu

AU - Kim, Myeong Ha

AU - Chang, Joonyeon

AU - Park, Jae Gwan

AU - Choi, Heon Jin

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction.

AB - Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction.

UR - http://www.scopus.com/inward/record.url?scp=73849101314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73849101314&partnerID=8YFLogxK

U2 - 10.1063/1.3267047

DO - 10.1063/1.3267047

M3 - Article

AN - SCOPUS:73849101314

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 123903

ER -