Magnetic InxGa1 - xN nanowires at room temperature using Cu dopant and annealing

Youn Ho Park, Ryong Ha, Tea Eon Park, Sung Wook Kim, Dongjea Seo, Heon-Jin Choi

Research output: Contribution to journalArticle

Abstract

Single-crystal, Cu-doped InxGa1 - xN nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:InxGa1 - xN nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10-24 Am2) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3-edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3d9. It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.

Original languageEnglish
JournalNanoscale Research Letters
Volume10
Issue number1
DOIs
Publication statusPublished - 2015 Dec 15

Fingerprint

Nanowires
nanowires
Doping (additives)
Annealing
annealing
room temperature
Magnetic moments
magnetic moments
Diamagnetism
Temperature
diamagnetism
Ferromagnetism
SQUIDs
X ray absorption
Dichroism
Magnetometers
magnetometers
ferromagnetism
dichroism
micrometers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Park, Youn Ho ; Ha, Ryong ; Park, Tea Eon ; Kim, Sung Wook ; Seo, Dongjea ; Choi, Heon-Jin. / Magnetic InxGa1 - xN nanowires at room temperature using Cu dopant and annealing. In: Nanoscale Research Letters. 2015 ; Vol. 10, No. 1.
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abstract = "Single-crystal, Cu-doped InxGa1 - xN nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:InxGa1 - xN nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10-24 Am2) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3-edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3d9. It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.",
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Magnetic InxGa1 - xN nanowires at room temperature using Cu dopant and annealing. / Park, Youn Ho; Ha, Ryong; Park, Tea Eon; Kim, Sung Wook; Seo, Dongjea; Choi, Heon-Jin.

In: Nanoscale Research Letters, Vol. 10, No. 1, 15.12.2015.

Research output: Contribution to journalArticle

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T1 - Magnetic InxGa1 - xN nanowires at room temperature using Cu dopant and annealing

AU - Park, Youn Ho

AU - Ha, Ryong

AU - Park, Tea Eon

AU - Kim, Sung Wook

AU - Seo, Dongjea

AU - Choi, Heon-Jin

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