Magnetic properties, microstructures, and corrosion resistance of high-saturation FeMoN and FeRhN films for recording heads

Shan X. Wang; Kyusik Sin; Jongill Hong; Lee Nguyentran

doi:10.1109/20.825827

Magnetic properties, microstructures, and corrosion resistance of high-saturation FeMoN and FeRhN films for recording heads

Shan X. Wang, Kyusik Sin, Jongill Hong, Lee Nguyentran

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated high-saturation FeMoN and FeRhN films, deposited by radio frequency -diode reactive sputtering on alumina-TiC substrates, for inductive head applications. A minimum coercivity of approx. 1.2 Oe is obtained in (Fe _97.8Mo _2.2)N films at a N ₂/Ar flow ratio of approx. 6.2%. A minimum coercivity of approx. 1.6 Oe is obtained in (Fe _96.9Rh _3.1)N films at a N ₂/Ar flow ratio of approx. 4.6%. The films mainly consist of α-Fe phase and γ′-Fe ₄N phase. The magnetic properties of these films are stable under easy-axis field annealing up to 350°C. Addition of Rh or Mo to FeN has resulted in a significant improvement in corrosion resistance over that of FeN. The localized corrosion resistance of FeRhN and FeMoN can be comparable to that of Permalloy. In contrast, their intrinsic corrosion resistance is inferior to that of Permalloy, but it can be adjusted and controlled by pH level.

Original language	English
Pages (from-to)	513-520
Number of pages	8
Journal	IEEE Transactions on Magnetics
Volume	36
Issue number	2
DOIs	https://doi.org/10.1109/20.825827
Publication status	Published - 2000

Bibliographical note

Funding Information:
Manuscript received June 10, 1999; revised September 27, 1999. This work was supported in part by the National Science Foundation under Grant ECS-9710223. S. X. Wang is with the Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-4045 USA (e-mail: sxwang@ee.stanford.edu). K. Sin is with the Read-Rite Corporation, Fremont, CA 94539 USA. J. Hong is with the File Memory Laboratory, Fujitsu Limited, Atsugi 243-0197 Japan. L. Nguyentran is with the IBM Storage Systems Division, San Jose, CA 92037 USA. Publisher Item Identifier S 0018-9464(00)00473-8.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.825827

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title = "Magnetic properties, microstructures, and corrosion resistance of high-saturation FeMoN and FeRhN films for recording heads",

abstract = "We have investigated high-saturation FeMoN and FeRhN films, deposited by radio frequency -diode reactive sputtering on alumina-TiC substrates, for inductive head applications. A minimum coercivity of approx. 1.2 Oe is obtained in (Fe 97.8Mo 2.2)N films at a N 2/Ar flow ratio of approx. 6.2%. A minimum coercivity of approx. 1.6 Oe is obtained in (Fe 96.9Rh 3.1)N films at a N 2/Ar flow ratio of approx. 4.6%. The films mainly consist of α-Fe phase and γ′-Fe 4N phase. The magnetic properties of these films are stable under easy-axis field annealing up to 350°C. Addition of Rh or Mo to FeN has resulted in a significant improvement in corrosion resistance over that of FeN. The localized corrosion resistance of FeRhN and FeMoN can be comparable to that of Permalloy. In contrast, their intrinsic corrosion resistance is inferior to that of Permalloy, but it can be adjusted and controlled by pH level.",

author = "Wang, {Shan X.} and Kyusik Sin and Jongill Hong and Lee Nguyentran",

note = "Funding Information: Manuscript received June 10, 1999; revised September 27, 1999. This work was supported in part by the National Science Foundation under Grant ECS-9710223. S. X. Wang is with the Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-4045 USA (e-mail: sxwang@ee.stanford.edu). K. Sin is with the Read-Rite Corporation, Fremont, CA 94539 USA. J. Hong is with the File Memory Laboratory, Fujitsu Limited, Atsugi 243-0197 Japan. L. Nguyentran is with the IBM Storage Systems Division, San Jose, CA 92037 USA. Publisher Item Identifier S 0018-9464(00)00473-8.",

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AU - Wang, Shan X.

AU - Sin, Kyusik

AU - Hong, Jongill

AU - Nguyentran, Lee

N1 - Funding Information: Manuscript received June 10, 1999; revised September 27, 1999. This work was supported in part by the National Science Foundation under Grant ECS-9710223. S. X. Wang is with the Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-4045 USA (e-mail: sxwang@ee.stanford.edu). K. Sin is with the Read-Rite Corporation, Fremont, CA 94539 USA. J. Hong is with the File Memory Laboratory, Fujitsu Limited, Atsugi 243-0197 Japan. L. Nguyentran is with the IBM Storage Systems Division, San Jose, CA 92037 USA. Publisher Item Identifier S 0018-9464(00)00473-8.

PY - 2000

Y1 - 2000

N2 - We have investigated high-saturation FeMoN and FeRhN films, deposited by radio frequency -diode reactive sputtering on alumina-TiC substrates, for inductive head applications. A minimum coercivity of approx. 1.2 Oe is obtained in (Fe 97.8Mo 2.2)N films at a N 2/Ar flow ratio of approx. 6.2%. A minimum coercivity of approx. 1.6 Oe is obtained in (Fe 96.9Rh 3.1)N films at a N 2/Ar flow ratio of approx. 4.6%. The films mainly consist of α-Fe phase and γ′-Fe 4N phase. The magnetic properties of these films are stable under easy-axis field annealing up to 350°C. Addition of Rh or Mo to FeN has resulted in a significant improvement in corrosion resistance over that of FeN. The localized corrosion resistance of FeRhN and FeMoN can be comparable to that of Permalloy. In contrast, their intrinsic corrosion resistance is inferior to that of Permalloy, but it can be adjusted and controlled by pH level.

AB - We have investigated high-saturation FeMoN and FeRhN films, deposited by radio frequency -diode reactive sputtering on alumina-TiC substrates, for inductive head applications. A minimum coercivity of approx. 1.2 Oe is obtained in (Fe 97.8Mo 2.2)N films at a N 2/Ar flow ratio of approx. 6.2%. A minimum coercivity of approx. 1.6 Oe is obtained in (Fe 96.9Rh 3.1)N films at a N 2/Ar flow ratio of approx. 4.6%. The films mainly consist of α-Fe phase and γ′-Fe 4N phase. The magnetic properties of these films are stable under easy-axis field annealing up to 350°C. Addition of Rh or Mo to FeN has resulted in a significant improvement in corrosion resistance over that of FeN. The localized corrosion resistance of FeRhN and FeMoN can be comparable to that of Permalloy. In contrast, their intrinsic corrosion resistance is inferior to that of Permalloy, but it can be adjusted and controlled by pH level.

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Magnetic properties, microstructures, and corrosion resistance of high-saturation FeMoN and FeRhN films for recording heads

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