Magnetic properties of LCMO deposited films

Seung Iel Park, KwangHo Jeong, Young Suk Cho, Chul Sung Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

Original languageEnglish
Pages (from-to)692-694
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume242-245
DOIs
Publication statusPublished - 2002 Jan 1

Fingerprint

Magnetic properties
magnetic properties
Spin coating
Sputtering
coating
sputtering
gels
Magnetoresistance
Magnetron sputtering
Sol-gel process
Sol-gels
Transition metals
magnetron sputtering
chemical composition
Crystal structure
transition metals
Single crystals
Semiconductor materials
temperature dependence
crystal structure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Park, Seung Iel ; Jeong, KwangHo ; Cho, Young Suk ; Kim, Chul Sung. / Magnetic properties of LCMO deposited films. In: Journal of Magnetism and Magnetic Materials. 2002 ; Vol. 242-245. pp. 692-694.
@article{09e96613adc842fb9d4b714c38ff5178,
title = "Magnetic properties of LCMO deposited films",
abstract = "La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273{\%} at 226 K.",
author = "Park, {Seung Iel} and KwangHo Jeong and Cho, {Young Suk} and Kim, {Chul Sung}",
year = "2002",
month = "1",
day = "1",
doi = "10.1016/S0304-8853(01)01019-8",
language = "English",
volume = "242-245",
pages = "692--694",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

Magnetic properties of LCMO deposited films. / Park, Seung Iel; Jeong, KwangHo; Cho, Young Suk; Kim, Chul Sung.

In: Journal of Magnetism and Magnetic Materials, Vol. 242-245, 01.01.2002, p. 692-694.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetic properties of LCMO deposited films

AU - Park, Seung Iel

AU - Jeong, KwangHo

AU - Cho, Young Suk

AU - Kim, Chul Sung

PY - 2002/1/1

Y1 - 2002/1/1

N2 - La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

AB - La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

UR - http://www.scopus.com/inward/record.url?scp=0036544202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036544202&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(01)01019-8

DO - 10.1016/S0304-8853(01)01019-8

M3 - Article

AN - SCOPUS:0036544202

VL - 242-245

SP - 692

EP - 694

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -