Magnetic properties of LCMO deposited films

Seung Iel Park; Kwang Ho Jeong; Young Suk Cho; Chul Sung Kim

doi:10.1016/S0304-8853(01)01019-8

Magnetic properties of LCMO deposited films

Seung Iel Park, Kwang Ho Jeong, Young Suk Cho, Chul Sung Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO₃(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La_0.89Ca_0.11MnO₃, respectively, while the film prepared by sol-gel spin coating was cubic with La_0.7Ca_0.3MnO₃. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

Original language	English
Pages (from-to)	692-694
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	242-245
DOIs	https://doi.org/10.1016/S0304-8853(01)01019-8
Publication status	Published - 2002 Apr

Bibliographical note

Funding Information:
This work has been supported by the Brain Korea 21 Program and the Korea Science and Engineering Foundation (97-0702-0401-5).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(01)01019-8

Cite this

@article{09e96613adc842fb9d4b714c38ff5178,

title = "Magnetic properties of LCMO deposited films",

abstract = "La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.",

author = "Park, {Seung Iel} and Jeong, {Kwang Ho} and Cho, {Young Suk} and Kim, {Chul Sung}",

note = "Funding Information: This work has been supported by the Brain Korea 21 Program and the Korea Science and Engineering Foundation (97-0702-0401-5).",

year = "2002",

month = apr,

doi = "10.1016/S0304-8853(01)01019-8",

language = "English",

volume = "242-245",

pages = "692--694",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

}

TY - JOUR

T1 - Magnetic properties of LCMO deposited films

AU - Park, Seung Iel

AU - Jeong, Kwang Ho

AU - Cho, Young Suk

AU - Kim, Chul Sung

N1 - Funding Information: This work has been supported by the Brain Korea 21 Program and the Korea Science and Engineering Foundation (97-0702-0401-5).

PY - 2002/4

Y1 - 2002/4

N2 - La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

AB - La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

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U2 - 10.1016/S0304-8853(01)01019-8

DO - 10.1016/S0304-8853(01)01019-8

M3 - Article

AN - SCOPUS:0036544202

SN - 0304-8853

VL - 242-245

SP - 692

EP - 694

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Magnetic properties of LCMO deposited films

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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