La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La0.89Ca0.11MnO3, respectively, while the film prepared by sol-gel spin coating was cubic with La0.7Ca0.3MnO3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.
Bibliographical noteFunding Information:
This work has been supported by the Brain Korea 21 Program and the Korea Science and Engineering Foundation (97-0702-0401-5).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics