This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline β-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 nm and a length of several μm. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature.
Bibliographical noteFunding Information:
This research was supported in part by a grant from the program of the National Research Laboratory of the Korean Ministry of Science and Technology (R0A-2007-000-20075-0), IT R&D program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nano junction), the Seoul Research and Business Development Program (10816), Korea Institute of Science and Technology, and the Second Stage of Brain Korea 21 Project in 2007.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys
- Materials Chemistry