Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev; Vadim Sh Yalishev; Ziyodbek A. Yunusov; Seung Joo Lee; Hee Chang Jeon; Young Hae Kwon; Geun Tak Lee; Cheol Min Park; Tae Won Kang

doi:10.1016/j.cap.2015.04.025

Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev, Vadim Sh Yalishev, Ziyodbek A. Yunusov, Seung Joo Lee, Hee Chang Jeon, Young Hae Kwon, Geun Tak Lee, Cheol Min Park, Tae Won Kang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of T_C is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

Original language	English
Pages (from-to)	S22-S25
Journal	Current Applied Physics
Volume	15
DOIs	https://doi.org/10.1016/j.cap.2015.04.025
Publication status	Published - 2015 Sep 1

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All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

Cite this

Yuldashev, S. U., Yalishev, V. S., Yunusov, Z. A., Lee, S. J., Jeon, H. C., Kwon, Y. H., Lee, G. T., Park, C. M., & Kang, T. W. (2015). Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. Current Applied Physics, 15, S22-S25. https://doi.org/10.1016/j.cap.2015.04.025

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abstract = "The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.",

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AU - Yuldashev, Shavkat U.

AU - Yalishev, Vadim Sh

AU - Yunusov, Ziyodbek A.

AU - Lee, Seung Joo

AU - Jeon, Hee Chang

AU - Kwon, Young Hae

AU - Lee, Geun Tak

AU - Park, Cheol Min

AU - Kang, Tae Won

PY - 2015/9/1

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N2 - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

AB - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

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10.1016/j.cap.2015.04.025