Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev, Vadim Sh Yalishev, Ziyodbek A. Yunusov, Seung Joo Lee, Hee Chang Jeon, Young Hae Kwon, Geun Tak Lee, Cheol Min Park, Tae Won Kang

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Abstract

The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

Original languageEnglish
Pages (from-to)S22-S25
JournalCurrent Applied Physics
Volume15
DOIs
Publication statusPublished - 2015 Sep 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Yuldashev, S. U., Yalishev, V. S., Yunusov, Z. A., Lee, S. J., Jeon, H. C., Kwon, Y. H., Lee, G. T., Park, C. M., & Kang, T. W. (2015). Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. Current Applied Physics, 15, S22-S25. https://doi.org/10.1016/j.cap.2015.04.025