Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev; Vadim Sh Yalishev; Ziyodbek A. Yunusov; Seung Joo Lee; Hee Chang Jeon; Young Hae Kwon; Geun Tak Lee; Cheol Min Park; Tae Won Kang

doi:10.1016/j.cap.2015.04.025

Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev, Vadim Sh Yalishev, Ziyodbek A. Yunusov, Seung Joo Lee, Hee Chang Jeon, Young Hae Kwon, Geun Tak Lee, Cheol Min Park, Tae Won Kang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of T_C is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

Original language	English
Pages (from-to)	S22-S25
Journal	Current Applied Physics
Volume	15
DOIs	https://doi.org/10.1016/j.cap.2015.04.025
Publication status	Published - 2015 Sep 1

Bibliographical note

Funding Information:
This research was supported by the grant of National Research Foundation (NRF) of Korea (MSIP No. 2014-066298 ) and by Leading Foreign Research Institute Recruitment Program funded by the Ministry of Education, Science and Technology (MEST) (No. 2012RIAlA2005772 , No. 2012K1A3A1A30055028 , and No. 2014-039452 ).

Publisher Copyright:
© 2015 Elsevier B.V.All rights reserved.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2015.04.025

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title = "Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures",

abstract = "The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.",

author = "Yuldashev, {Shavkat U.} and Yalishev, {Vadim Sh} and Yunusov, {Ziyodbek A.} and Lee, {Seung Joo} and Jeon, {Hee Chang} and Kwon, {Young Hae} and Lee, {Geun Tak} and Park, {Cheol Min} and Kang, {Tae Won}",

note = "Funding Information: This research was supported by the grant of National Research Foundation (NRF) of Korea (MSIP No. 2014-066298 ) and by Leading Foreign Research Institute Recruitment Program funded by the Ministry of Education, Science and Technology (MEST) (No. 2012RIAlA2005772 , No. 2012K1A3A1A30055028 , and No. 2014-039452 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.All rights reserved.",

year = "2015",

month = sep,

day = "1",

doi = "10.1016/j.cap.2015.04.025",

language = "English",

volume = "15",

pages = "S22--S25",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

}

Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. / Yuldashev, Shavkat U.; Yalishev, Vadim Sh; Yunusov, Ziyodbek A.; Lee, Seung Joo; Jeon, Hee Chang; Kwon, Young Hae; Lee, Geun Tak; Park, Cheol Min; Kang, Tae Won.

In: Current Applied Physics, Vol. 15, 01.09.2015, p. S22-S25.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

AU - Yuldashev, Shavkat U.

AU - Yalishev, Vadim Sh

AU - Yunusov, Ziyodbek A.

AU - Lee, Seung Joo

AU - Jeon, Hee Chang

AU - Kwon, Young Hae

AU - Lee, Geun Tak

AU - Park, Cheol Min

AU - Kang, Tae Won

N1 - Funding Information: This research was supported by the grant of National Research Foundation (NRF) of Korea (MSIP No. 2014-066298 ) and by Leading Foreign Research Institute Recruitment Program funded by the Ministry of Education, Science and Technology (MEST) (No. 2012RIAlA2005772 , No. 2012K1A3A1A30055028 , and No. 2014-039452 ). Publisher Copyright: © 2015 Elsevier B.V.All rights reserved.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

AB - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

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DO - 10.1016/j.cap.2015.04.025

M3 - Article

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VL - 15

SP - S22-S25

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

ER -

Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

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