The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.
Bibliographical noteFunding Information:
This research was supported by the grant of National Research Foundation (NRF) of Korea (MSIP No. 2014-066298 ) and by Leading Foreign Research Institute Recruitment Program funded by the Ministry of Education, Science and Technology (MEST) (No. 2012RIAlA2005772 , No. 2012K1A3A1A30055028 , and No. 2014-039452 ).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)