Abstract
The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.
| Original language | English |
|---|---|
| Pages (from-to) | S22-S25 |
| Journal | Current Applied Physics |
| Volume | 15 |
| DOIs | |
| Publication status | Published - 2015 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. / Yuldashev, Shavkat U.; Yalishev, Vadim Sh; Yunusov, Ziyodbek A.; Lee, Seung Joo; Jeon, Hee Chang; Kwon, Young Hae; Lee, Geun Tak; Park, Cheol Min; Kang, Tae Won.
In: Current Applied Physics, Vol. 15, 01.09.2015, p. S22-S25.Research output: Contribution to journal › Article
TY - JOUR
T1 - Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures
AU - Yuldashev, Shavkat U.
AU - Yalishev, Vadim Sh
AU - Yunusov, Ziyodbek A.
AU - Lee, Seung Joo
AU - Jeon, Hee Chang
AU - Kwon, Young Hae
AU - Lee, Geun Tak
AU - Park, Cheol Min
AU - Kang, Tae Won
PY - 2015/9/1
Y1 - 2015/9/1
N2 - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.
AB - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.
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U2 - 10.1016/j.cap.2015.04.025
DO - 10.1016/j.cap.2015.04.025
M3 - Article
AN - SCOPUS:84942370973
VL - 15
SP - S22-S25
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
ER -