Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

Shavkat U. Yuldashev, Vadim Sh Yalishev, Ziyodbek A. Yunusov, Seung Joo Lee, Hee Chang Jeon, Young Hae Kwon, Geun Tak Lee, Cheol Min Park, Tae Won Kang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

Original languageEnglish
Pages (from-to)S22-S25
JournalCurrent Applied Physics
Volume15
DOIs
Publication statusPublished - 2015 Sep 1

Fingerprint

Magnetoelectric effects
Curie temperature
Nanostructures
Ferroelectric materials
composite materials
electric fields
Composite materials
Electric fields
Electric field effects
Hole concentration
shift
Hall effect
vinylidene
fluorides
polarity
Semiconductor materials
Magnetic fields
electrical resistivity
magnetic fields
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Yuldashev, S. U., Yalishev, V. S., Yunusov, Z. A., Lee, S. J., Jeon, H. C., Kwon, Y. H., ... Kang, T. W. (2015). Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. Current Applied Physics, 15, S22-S25. https://doi.org/10.1016/j.cap.2015.04.025
Yuldashev, Shavkat U. ; Yalishev, Vadim Sh ; Yunusov, Ziyodbek A. ; Lee, Seung Joo ; Jeon, Hee Chang ; Kwon, Young Hae ; Lee, Geun Tak ; Park, Cheol Min ; Kang, Tae Won. / Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. In: Current Applied Physics. 2015 ; Vol. 15. pp. S22-S25.
@article{bfe449b4e7ea4de1b7fec976babd6299,
title = "Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures",
abstract = "The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.",
author = "Yuldashev, {Shavkat U.} and Yalishev, {Vadim Sh} and Yunusov, {Ziyodbek A.} and Lee, {Seung Joo} and Jeon, {Hee Chang} and Kwon, {Young Hae} and Lee, {Geun Tak} and Park, {Cheol Min} and Kang, {Tae Won}",
year = "2015",
month = "9",
day = "1",
doi = "10.1016/j.cap.2015.04.025",
language = "English",
volume = "15",
pages = "S22--S25",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",

}

Yuldashev, SU, Yalishev, VS, Yunusov, ZA, Lee, SJ, Jeon, HC, Kwon, YH, Lee, GT, Park, CM & Kang, TW 2015, 'Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures', Current Applied Physics, vol. 15, pp. S22-S25. https://doi.org/10.1016/j.cap.2015.04.025

Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. / Yuldashev, Shavkat U.; Yalishev, Vadim Sh; Yunusov, Ziyodbek A.; Lee, Seung Joo; Jeon, Hee Chang; Kwon, Young Hae; Lee, Geun Tak; Park, Cheol Min; Kang, Tae Won.

In: Current Applied Physics, Vol. 15, 01.09.2015, p. S22-S25.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures

AU - Yuldashev, Shavkat U.

AU - Yalishev, Vadim Sh

AU - Yunusov, Ziyodbek A.

AU - Lee, Seung Joo

AU - Jeon, Hee Chang

AU - Kwon, Young Hae

AU - Lee, Geun Tak

AU - Park, Cheol Min

AU - Kang, Tae Won

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

AB - The electric-field effect on the Curie temperature of the ferromagnetic semiconductor GaMnAs and ferroelectric polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) multiferroic nanostructures have been investigated. The Curie temperatures of GaMnAs layers were determined from the temperature dependencies of the resistivity at zero magnetic field and the anomalous Hall effect measurements. Under the electric-field potential with different polarities applied to the ferroelectric gate the shift of the Curie temperature in GaMnAs has been observed. The shift of TC is due to the variation of the hole concentration in the ferromagnetic layer induced by the gate electric field.

UR - http://www.scopus.com/inward/record.url?scp=84942370973&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942370973&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2015.04.025

DO - 10.1016/j.cap.2015.04.025

M3 - Article

AN - SCOPUS:84942370973

VL - 15

SP - S22-S25

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

ER -

Yuldashev SU, Yalishev VS, Yunusov ZA, Lee SJ, Jeon HC, Kwon YH et al. Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures. Current Applied Physics. 2015 Sep 1;15:S22-S25. https://doi.org/10.1016/j.cap.2015.04.025