Abstract
The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 147-151 |
| Number of pages | 5 |
| Journal | Electronic Materials Letters |
| Volume | 4 |
| Issue number | 4 |
| Publication status | Published - 2008 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
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Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer. / Park, C. S.; Kim, Hyungjun; Son, J. Y.
In: Electronic Materials Letters, Vol. 4, No. 4, 01.12.2008, p. 147-151.Research output: Contribution to journal › Article
TY - JOUR
T1 - Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer
AU - Park, C. S.
AU - Kim, Hyungjun
AU - Son, J. Y.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.
AB - The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.
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M3 - Article
AN - SCOPUS:70349436234
VL - 4
SP - 147
EP - 151
JO - Electronic Materials Letters
JF - Electronic Materials Letters
SN - 1738-8090
IS - 4
ER -