Abstract
The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 147-151 |
| Number of pages | 5 |
| Journal | Electronic Materials Letters |
| Volume | 4 |
| Issue number | 4 |
| Publication status | Published - 2008 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
Park, C. S., Kim, H., & Son, J. Y. (2008). Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer. Electronic Materials Letters, 4(4), 147-151.