Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer

C. S. Park, Hyungjun Kim, J. Y. Son

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.

Original languageEnglish
Pages (from-to)147-151
Number of pages5
JournalElectronic Materials Letters
Volume4
Issue number4
Publication statusPublished - 2008 Dec 1

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Epilayers
Magnetoresistance
Magnetization
Liquid phase epitaxy
Ferromagnetism
Electron diffraction
Diffraction patterns
Precipitates
Crystal structure
Phase transitions
Transmission electron microscopy
Temperature
Diluted magnetic semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer. / Park, C. S.; Kim, Hyungjun; Son, J. Y.

In: Electronic Materials Letters, Vol. 4, No. 4, 01.12.2008, p. 147-151.

Research output: Contribution to journalArticle

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