Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer

C. S. Park; Hyungjun Kim; J. Y. Son

Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer

C. S. Park, Hyungjun Kim, J. Y. Son

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.

Original language	English
Pages (from-to)	147-151
Number of pages	5
Journal	Electronic Materials Letters
Volume	4
Issue number	4
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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abstract = "The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.",

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AU - Park, C. S.

AU - Kim, Hyungjun

AU - Son, J. Y.

PY - 2008

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N2 - The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.

AB - The InMnP:Zn epilayer grown by liquid phase epitaxy method showed a heteroepitaxial crystal structure with precipitates. The magnetoresistance of the InMnP:Zn epilayer demonstrated that the InMnP:Zn epilayer has intrinsic characteristics of a diluted magnetic semiconductor (DMS). The temperature dependence of magnetization showed a mixture of two phase transitions. The origins of these transitions are attributed to the fact that the carrier mediated DMS and the secondary phase make ferromagnetism possible in view of the magnetization curve and the electron diffraction pattern of transmission electron microscopy.

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M3 - Article

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JO - Electronic Materials Letters

JF - Electronic Materials Letters

SN - 1738-8090

IS - 4

ER -

Magnetoresistance and magnetization of heteroepitaxial InMnP:Zn layer

Abstract

All Science Journal Classification (ASJC) codes

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