Magnetotransport and electron subband studies of edge delta-doped Al 0.27Ga0.73As/GaAs single quantum wells

T. W. Kim, K. H. Yoo, K. S. Lee, Y. Kim, S. K. Min, S. S. Yom, S. J. Lee

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5 Citations (Scopus)

Abstract

Shubnikov-de Haas and Van der Pauw Hall effect measurements at 1.5 K have been carried out to investigate the existence of a two-dimensional electron gas and to determine subband energies in a Si-delta-doped Al0.27Ga 0.73As/GaAs single quantum well. The fast Fourier transformation results for the S-dH data indicate clearly the occupation of two subbands in edge delta-doped Al0.27Ga0.73As/GaAs quantum wells. Capacitance-voltage profiling and temperature-dependent photoluminescence measurements have been performed to characterize the properties of edge delta-doped Al0.27Ga0.73As/GaAs quantum wells. Using these experimental results and a self-consistent numerical method which took into account the exchange-correlation effects, the electron subband energies were determined. These results indicate that edge delta-doped Al 0.27Ga0.73As/GaAs single quantum wells are similar to the asymmetrical potential wells occupied by relatively high electron carrier densities.

Original languageEnglish
Pages (from-to)2863-2867
Number of pages5
JournalJournal of Applied Physics
Volume76
Issue number5
DOIs
Publication statusPublished - 1994 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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