Magnetotransport in an n-type diluted magnetic semiconductor: (Ga,Mn)N

K. I. Lee, M. H. Ham, J. M. Lee, J. Y. Chang, J. M. Myoung, S. H. Han, W. Y. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, magnetotransport in the ferromagnetic epitaxial (Ga,Mn)N films grown by plasma-enhanced molecular beam epitaxy (PEMBE) was reported. The variation of magnetoresistance (ΔR/R) with magnetic fields applied perpendicular to the sample was reported.

Original languageEnglish
Title of host publicationIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780376471, 9780780376472
DOIs
Publication statusPublished - 2003 Jan 1
Event2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States
Duration: 2003 Mar 302003 Apr 3

Publication series

NameIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference

Other

Other2003 IEEE International Magnetics Conference, Intermag 2003
CountryUnited States
CityBoston
Period03/3/3003/4/3

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, K. I., Ham, M. H., Lee, J. M., Chang, J. Y., Myoung, J. M., Han, S. H., & Lee, W. Y. (2003). Magnetotransport in an n-type diluted magnetic semiconductor: (Ga,Mn)N. In Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference [1230410] (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2003.1230410