TY - JOUR
T1 - Magnetotransport in (Ga,Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy
AU - Ham, Moon Ho
AU - Jeong, Min Chang
AU - Lee, Woo Young
AU - Myoung, Jae Min
AU - Chang, Joon Yeon
AU - Han, Suk Hee
PY - 2003/11/15
Y1 - 2003/11/15
N2 - We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.
AB - We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.
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U2 - 10.1143/jjap.42.l1372
DO - 10.1143/jjap.42.l1372
M3 - Article
AN - SCOPUS:1642447055
SN - 0021-4922
VL - 42
SP - L1372-L1374
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 11 B
ER -