Magnetotransport in (Ga,Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy

Moon Ho Ham, Min Chang Jeong, Woo Young Lee, Jae Min Myoung, Joon Yeon Chang, Suk Hee Han

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9 Citations (Scopus)


We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.

Original languageEnglish
Pages (from-to)L1372-L1374
JournalJapanese Journal of Applied Physics
Issue number11 B
Publication statusPublished - 2003 Nov 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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