Magnetotransport in (Ga,Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy

Moon Ho Ham, Min Chang Jeong, Woo Young Lee, Jae Min Myoung, Joon Yeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.

Original languageEnglish
Pages (from-to)L1372-L1374
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number11 B
Publication statusPublished - 2003 Nov 15

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ferromagnetism
molecular beam epitaxy
electron gas
Hall effect
Curie temperature
moments
room temperature
interactions
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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title = "Magnetotransport in (Ga,Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy",
abstract = "We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.",
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Magnetotransport in (Ga,Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy. / Ham, Moon Ho; Jeong, Min Chang; Lee, Woo Young; Myoung, Jae Min; Chang, Joon Yeon; Han, Suk Hee.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 11 B, 15.11.2003, p. L1372-L1374.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetotransport in (Ga,Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy

AU - Ham, Moon Ho

AU - Jeong, Min Chang

AU - Lee, Woo Young

AU - Myoung, Jae Min

AU - Chang, Joon Yeon

AU - Han, Suk Hee

PY - 2003/11/15

Y1 - 2003/11/15

N2 - We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.

AB - We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.

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