Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction

W. J. Hwang, H. J. Lee, K. I. Lee, J. M. Lee, J. Y. Chang, S. H. Han, Y. K. Kim, Wooyoung Lee, Moo Whan Shin

Research output: Contribution to journalConference article

Abstract

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Original languageEnglish
Pages (from-to)1081-1084
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26
EventDesigning, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of
Duration: 2003 Nov 52003 Nov 8

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Galvanomagnetic effects
Magnetization
injection
Magnetic fields
Magnetoresistance
magnetization
magnetic fields
Electrons
electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hwang, W. J., Lee, H. J., Lee, K. I., Lee, J. M., Chang, J. Y., Han, S. H., ... Shin, M. W. (2004). Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. Materials Science Forum, 449-452(II), 1081-1084.
Hwang, W. J. ; Lee, H. J. ; Lee, K. I. ; Lee, J. M. ; Chang, J. Y. ; Han, S. H. ; Kim, Y. K. ; Lee, Wooyoung ; Shin, Moo Whan. / Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. In: Materials Science Forum. 2004 ; Vol. 449-452, No. II. pp. 1081-1084.
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title = "Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction",
abstract = "The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.",
author = "Hwang, {W. J.} and Lee, {H. J.} and Lee, {K. I.} and Lee, {J. M.} and Chang, {J. Y.} and Han, {S. H.} and Kim, {Y. K.} and Wooyoung Lee and Shin, {Moo Whan}",
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Hwang, WJ, Lee, HJ, Lee, KI, Lee, JM, Chang, JY, Han, SH, Kim, YK, Lee, W & Shin, MW 2004, 'Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction', Materials Science Forum, vol. 449-452, no. II, pp. 1081-1084.

Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. / Hwang, W. J.; Lee, H. J.; Lee, K. I.; Lee, J. M.; Chang, J. Y.; Han, S. H.; Kim, Y. K.; Lee, Wooyoung; Shin, Moo Whan.

In: Materials Science Forum, Vol. 449-452, No. II, 26.07.2004, p. 1081-1084.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction

AU - Hwang, W. J.

AU - Lee, H. J.

AU - Lee, K. I.

AU - Lee, J. M.

AU - Chang, J. Y.

AU - Han, S. H.

AU - Kim, Y. K.

AU - Lee, Wooyoung

AU - Shin, Moo Whan

PY - 2004/7/26

Y1 - 2004/7/26

N2 - The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

AB - The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

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M3 - Conference article

VL - 449-452

SP - 1081

EP - 1084

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - II

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Hwang WJ, Lee HJ, Lee KI, Lee JM, Chang JY, Han SH et al. Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. Materials Science Forum. 2004 Jul 26;449-452(II):1081-1084.