Magnetotransport properties in semimetallic bismuth thin films

K. I. Lee, M. H. Jeun, J. M. Lee, J. Y. Chang, S. H. Han, J. G. Ha, W. Y. Lee

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Abstract

The magnetotransport properties of the electroplated and sputtered Bi thin films have been investigated in the range 4 - 300 K. A marked increase from 5,200 % to 80,000 % in the ordinary magnetoresistance (MR) for the electroplated Bi thin film was observed after thermal anneal at 4 K. The MR ratios for the as-grown and the annealed Bi thin films were found to exhibit 560 % and 590 %, respectively, at 300 K. On the other hand, the MR for the sputtered Bi film grown by sputtering was hardly observed at 4 and 300 K, whereas the MR ratios after anneal were found to reach 30,000 % at 4 K and 600 % at 300 K. We find that the room temperature MR in the sputtered films depends on the trigonal-axis oriented microstructures and grain size, in contrast to the electroplated films. Our results demonstrate the very large room temperature MR in the electroplated and sputtered Bi thin films, which can be used for spintronic device applications.

Original languageEnglish
Pages (from-to)1061-1064
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26
EventDesigning, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of
Duration: 2003 Nov 52003 Nov 8

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, K. I., Jeun, M. H., Lee, J. M., Chang, J. Y., Han, S. H., Ha, J. G., & Lee, W. Y. (2004). Magnetotransport properties in semimetallic bismuth thin films. Materials Science Forum, 449-452(II), 1061-1064.