Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method

The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0× 10-4 and 8.2× 10-5 Ω cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model.