Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method

Wooyoung Shim, Dohun Kim, Kyoung Il Lee, Kye Jin Jeon, Jinhee Ham, Joonyeon Chang, Suk Hee Han, Won Young Jeung, Mark Johnson, Wooyoung Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0× 10-4 and 8.2× 10-5 Ω cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model.

Original languageEnglish
Article number073715
JournalJournal of Applied Physics
Volume104
Issue number7
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method'. Together they form a unique fingerprint.

  • Cite this

    Shim, W., Kim, D., Lee, K. I., Jeon, K. J., Ham, J., Chang, J., Han, S. H., Jeung, W. Y., Johnson, M., & Lee, W. (2008). Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method. Journal of Applied Physics, 104(7), [073715]. https://doi.org/10.1063/1.2980277