Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method

Wooyoung Shim; Dohun Kim; Kyoung Il Lee; Kye Jin Jeon; Jinhee Ham; Joonyeon Chang; Suk Hee Han; Won Young Jeung; Mark Johnson; Wooyoung Lee

doi:10.1063/1.2980277

Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method

Wooyoung Shim, Dohun Kim, Kyoung Il Lee, Kye Jin Jeon, Jinhee Ham, Joonyeon Chang, Suk Hee Han, Won Young Jeung, Mark Johnson, Wooyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0× 10-4 and 8.2× 10-5 Ω cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model.

Original language	English
Article number	073715
Journal	Journal of Applied Physics
Volume	104
Issue number	7
DOIs	https://doi.org/10.1063/1.2980277
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by KOSEF through National Core Research Center for Nanomedical Technology (R15-2004-024-00000-0), by a grant from the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-314-C00107). MJ gratefully acknowledges the partial support of the Office of Naval Research, grant N0001408WX20705.

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Physics and Astronomy(all)

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title = "Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method",

abstract = "The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0× 10-4 and 8.2× 10-5 Ω cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model.",

author = "Wooyoung Shim and Dohun Kim and Lee, {Kyoung Il} and Jeon, {Kye Jin} and Jinhee Ham and Joonyeon Chang and Han, {Suk Hee} and Jeung, {Won Young} and Mark Johnson and Wooyoung Lee",

note = "Funding Information: This work was supported by KOSEF through National Core Research Center for Nanomedical Technology (R15-2004-024-00000-0), by a grant from the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-314-C00107). MJ gratefully acknowledges the partial support of the Office of Naval Research, grant N0001408WX20705.",

year = "2008",

doi = "10.1063/1.2980277",

language = "English",

volume = "104",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

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Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method. / Shim, Wooyoung; Kim, Dohun; Lee, Kyoung Il; Jeon, Kye Jin; Ham, Jinhee; Chang, Joonyeon; Han, Suk Hee; Jeung, Won Young; Johnson, Mark; Lee, Wooyoung.

In: Journal of Applied Physics, Vol. 104, No. 7, 073715, 2008.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

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AU - Shim, Wooyoung

AU - Kim, Dohun

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AU - Ham, Jinhee

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Jeung, Won Young

AU - Johnson, Mark

AU - Lee, Wooyoung

N1 - Funding Information: This work was supported by KOSEF through National Core Research Center for Nanomedical Technology (R15-2004-024-00000-0), by a grant from the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-314-C00107). MJ gratefully acknowledges the partial support of the Office of Naval Research, grant N0001408WX20705.

PY - 2008

Y1 - 2008

N2 - The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0× 10-4 and 8.2× 10-5 Ω cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model.

AB - The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0× 10-4 and 8.2× 10-5 Ω cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model.

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Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method

Abstract

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