The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0× 10-4 and 8.2× 10-5 Ω cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model.
Bibliographical noteFunding Information:
This work was supported by KOSEF through National Core Research Center for Nanomedical Technology (R15-2004-024-00000-0), by a grant from the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-314-C00107). MJ gratefully acknowledges the partial support of the Office of Naval Research, grant N0001408WX20705.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)