Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy

Joonyeon Chang, Gyeungho Kim, Woo Young Lee, Jae Min Myoung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Systematic transmission electron microscopy (TEM) study was performed to determine the change in lattice parameter of epitaxial Mn-doped GaN films with low Mn contents (0.06-0.5 at.%) grown by plasma-enhanced molecular beam epitaxy (PEMBE) by which added Mn distribution can be investigated. Secondary ion mass spectroscopy (SIMS) reveals that the Mn profiles for the films are uniform throughout the entire thickness range of 0.7-1.0 urn with no appreciable segregation. The lattice parameter for the plasma-enhanced molecular beam epitaxy grown GaMnN is found to be a=0.31865 nm, larger than those for the metal organic chemical vapor deposition grown GaN used as a substrate and plasma-enhanced molecular beam epitaxy grown GaN on metal organic chemical vapor deposition GaN, reflecting the expansion of unit lattice due to Mn ion substitution for Ga ion in the wurtzite (GaxMn1-x)N structure. Lattice parameter measurement is believed to give useful information on the crystalline quality of (GaxMn1-x)N structure grown by plasma-enhanced molecular beam epitaxy.

Original languageEnglish
Pages (from-to)144-149
Number of pages6
JournalThin Solid Films
Volume472
Issue number1-2
DOIs
Publication statusPublished - 2005 Jan 24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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