Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy

Joonyeon Chang; Gyeungho Kim; Woo Young Lee; Jae Min Myoung

doi:10.1016/j.tsf.2004.06.144

Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy

Joonyeon Chang, Gyeungho Kim, Woo Young Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Systematic transmission electron microscopy (TEM) study was performed to determine the change in lattice parameter of epitaxial Mn-doped GaN films with low Mn contents (0.06-0.5 at.%) grown by plasma-enhanced molecular beam epitaxy (PEMBE) by which added Mn distribution can be investigated. Secondary ion mass spectroscopy (SIMS) reveals that the Mn profiles for the films are uniform throughout the entire thickness range of 0.7-1.0 urn with no appreciable segregation. The lattice parameter for the plasma-enhanced molecular beam epitaxy grown GaMnN is found to be a=0.31865 nm, larger than those for the metal organic chemical vapor deposition grown GaN used as a substrate and plasma-enhanced molecular beam epitaxy grown GaN on metal organic chemical vapor deposition GaN, reflecting the expansion of unit lattice due to Mn ion substitution for Ga ion in the wurtzite (Ga_xMn_1-x)N structure. Lattice parameter measurement is believed to give useful information on the crystalline quality of (Ga_xMn_1-x)N structure grown by plasma-enhanced molecular beam epitaxy.

Original language	English
Pages (from-to)	144-149
Number of pages	6
Journal	Thin Solid Films
Volume	472
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.06.144
Publication status	Published - 2005 Jan 24

Bibliographical note

Funding Information:
This work was supported by KIST Vision 21 program.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.06.144

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title = "Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy",

abstract = "Systematic transmission electron microscopy (TEM) study was performed to determine the change in lattice parameter of epitaxial Mn-doped GaN films with low Mn contents (0.06-0.5 at.%) grown by plasma-enhanced molecular beam epitaxy (PEMBE) by which added Mn distribution can be investigated. Secondary ion mass spectroscopy (SIMS) reveals that the Mn profiles for the films are uniform throughout the entire thickness range of 0.7-1.0 urn with no appreciable segregation. The lattice parameter for the plasma-enhanced molecular beam epitaxy grown GaMnN is found to be a=0.31865 nm, larger than those for the metal organic chemical vapor deposition grown GaN used as a substrate and plasma-enhanced molecular beam epitaxy grown GaN on metal organic chemical vapor deposition GaN, reflecting the expansion of unit lattice due to Mn ion substitution for Ga ion in the wurtzite (GaxMn1-x)N structure. Lattice parameter measurement is believed to give useful information on the crystalline quality of (GaxMn1-x)N structure grown by plasma-enhanced molecular beam epitaxy.",

author = "Joonyeon Chang and Gyeungho Kim and Lee, {Woo Young} and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by KIST Vision 21 program.",

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doi = "10.1016/j.tsf.2004.06.144",

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AU - Chang, Joonyeon

AU - Kim, Gyeungho

AU - Lee, Woo Young

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by KIST Vision 21 program.

PY - 2005/1/24

Y1 - 2005/1/24

N2 - Systematic transmission electron microscopy (TEM) study was performed to determine the change in lattice parameter of epitaxial Mn-doped GaN films with low Mn contents (0.06-0.5 at.%) grown by plasma-enhanced molecular beam epitaxy (PEMBE) by which added Mn distribution can be investigated. Secondary ion mass spectroscopy (SIMS) reveals that the Mn profiles for the films are uniform throughout the entire thickness range of 0.7-1.0 urn with no appreciable segregation. The lattice parameter for the plasma-enhanced molecular beam epitaxy grown GaMnN is found to be a=0.31865 nm, larger than those for the metal organic chemical vapor deposition grown GaN used as a substrate and plasma-enhanced molecular beam epitaxy grown GaN on metal organic chemical vapor deposition GaN, reflecting the expansion of unit lattice due to Mn ion substitution for Ga ion in the wurtzite (GaxMn1-x)N structure. Lattice parameter measurement is believed to give useful information on the crystalline quality of (GaxMn1-x)N structure grown by plasma-enhanced molecular beam epitaxy.

AB - Systematic transmission electron microscopy (TEM) study was performed to determine the change in lattice parameter of epitaxial Mn-doped GaN films with low Mn contents (0.06-0.5 at.%) grown by plasma-enhanced molecular beam epitaxy (PEMBE) by which added Mn distribution can be investigated. Secondary ion mass spectroscopy (SIMS) reveals that the Mn profiles for the films are uniform throughout the entire thickness range of 0.7-1.0 urn with no appreciable segregation. The lattice parameter for the plasma-enhanced molecular beam epitaxy grown GaMnN is found to be a=0.31865 nm, larger than those for the metal organic chemical vapor deposition grown GaN used as a substrate and plasma-enhanced molecular beam epitaxy grown GaN on metal organic chemical vapor deposition GaN, reflecting the expansion of unit lattice due to Mn ion substitution for Ga ion in the wurtzite (GaxMn1-x)N structure. Lattice parameter measurement is believed to give useful information on the crystalline quality of (GaxMn1-x)N structure grown by plasma-enhanced molecular beam epitaxy.

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Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy

Abstract

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All Science Journal Classification (ASJC) codes

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