Manganite-based memristive heterojunction with tunable non-linear I-V characteristics

Hong Sub Lee, Hyung Ho Park, M. J. Rozenberg

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr1-xCaxMnO3 (PCMO) and CaMnO3-δ (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO. This journal is

Original languageEnglish
Pages (from-to)6444-6450
Number of pages7
JournalNanoscale
Volume7
Issue number15
DOIs
Publication statusPublished - 2015 Apr 21

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Heterojunctions
Electroforming
Crosstalk
Perovskite
Data storage equipment
Electric potential
manganite
Oxidation-Reduction
perovskite

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, Hong Sub ; Park, Hyung Ho ; Rozenberg, M. J. / Manganite-based memristive heterojunction with tunable non-linear I-V characteristics. In: Nanoscale. 2015 ; Vol. 7, No. 15. pp. 6444-6450.
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Manganite-based memristive heterojunction with tunable non-linear I-V characteristics. / Lee, Hong Sub; Park, Hyung Ho; Rozenberg, M. J.

In: Nanoscale, Vol. 7, No. 15, 21.04.2015, p. 6444-6450.

Research output: Contribution to journalArticle

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