Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature

Y. S. Rim, B. D. Ahn, J. S. Park, H. J. Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have investigated the reversal of conductivity of solution-processed ZnSnO (ZTO) films and thin-film transistors (TFTs) under high-pressure annealing (HPA) in terms of the field-effect mobility. When the ZTO TFTs had Zn : Sn ratios of 1 : 1 and 2 : 1 under HPA, the value of the field-effect mobility showed a reversal phenomenon compared to TFTs without HPA. This result was attributed to the increase in conductivity due to the Fermi level being shifted up near the conduction band minimum by Sn activation under HPA. Furthermore, strong hybridization of the Sn 5s and the oxygen 2p orbitals was induced by HPA. As a result, HPA could contribute to the orbital splitting related to electron transport in the conduction band. In addition, the reliability of the HPA-ZTO TFT was more stable than without HPA because of the reduction in interface charge traps.

Original languageEnglish
Article number045502
JournalJournal of Physics D: Applied Physics
Volume47
Issue number4
DOIs
Publication statusPublished - 2014 Jan 29

Fingerprint

pressurizing
Pressurization
Thin film transistors
transistors
Annealing
conductivity
annealing
thin films
Temperature
Conduction bands
conduction bands
orbitals
Fermi level
Chemical activation
traps
activation
Oxygen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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title = "Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature",
abstract = "We have investigated the reversal of conductivity of solution-processed ZnSnO (ZTO) films and thin-film transistors (TFTs) under high-pressure annealing (HPA) in terms of the field-effect mobility. When the ZTO TFTs had Zn : Sn ratios of 1 : 1 and 2 : 1 under HPA, the value of the field-effect mobility showed a reversal phenomenon compared to TFTs without HPA. This result was attributed to the increase in conductivity due to the Fermi level being shifted up near the conduction band minimum by Sn activation under HPA. Furthermore, strong hybridization of the Sn 5s and the oxygen 2p orbitals was induced by HPA. As a result, HPA could contribute to the orbital splitting related to electron transport in the conduction band. In addition, the reliability of the HPA-ZTO TFT was more stable than without HPA because of the reduction in interface charge traps.",
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Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature. / Rim, Y. S.; Ahn, B. D.; Park, J. S.; Kim, H. J.

In: Journal of Physics D: Applied Physics, Vol. 47, No. 4, 045502, 29.01.2014.

Research output: Contribution to journalArticle

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T1 - Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature

AU - Rim, Y. S.

AU - Ahn, B. D.

AU - Park, J. S.

AU - Kim, H. J.

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AB - We have investigated the reversal of conductivity of solution-processed ZnSnO (ZTO) films and thin-film transistors (TFTs) under high-pressure annealing (HPA) in terms of the field-effect mobility. When the ZTO TFTs had Zn : Sn ratios of 1 : 1 and 2 : 1 under HPA, the value of the field-effect mobility showed a reversal phenomenon compared to TFTs without HPA. This result was attributed to the increase in conductivity due to the Fermi level being shifted up near the conduction band minimum by Sn activation under HPA. Furthermore, strong hybridization of the Sn 5s and the oxygen 2p orbitals was induced by HPA. As a result, HPA could contribute to the orbital splitting related to electron transport in the conduction band. In addition, the reliability of the HPA-ZTO TFT was more stable than without HPA because of the reduction in interface charge traps.

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