Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition

Kyung Bae Park, Ji Sim Jung, Jong Man Kim, Myung Kwan Ryu, Sang Yoon Lee, Jang Yeon Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microcrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4, Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350°C The deposition rate in films was as high as 10Å/sec. This process produced μc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007
Pages399-403
Number of pages5
Publication statusPublished - 2007 Dec 1
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2007 Apr 92007 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
Volume989
ISSN (Print)0272-9172

Other

Other2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period07/4/907/4/13

Fingerprint

Microcrystalline silicon
Plasma enhanced chemical vapor deposition
Threshold voltage
threshold voltage
manufacturing
vapor deposition
Hole mobility
Electron mobility
hole mobility
silicon
Deposition rates
electron mobility
Raman spectroscopy
Volume fraction
Annealing
Crystalline materials
Fabrication
Glass
fabrication
annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, K. B., Jung, J. S., Kim, J. M., Ryu, M. K., Lee, S. Y., & Kwon, J. Y. (2007). Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 (pp. 399-403). (Materials Research Society Symposium Proceedings; Vol. 989).
Park, Kyung Bae ; Jung, Ji Sim ; Kim, Jong Man ; Ryu, Myung Kwan ; Lee, Sang Yoon ; Kwon, Jang Yeon. / Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007. 2007. pp. 399-403 (Materials Research Society Symposium Proceedings).
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abstract = "Microcrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4, Raman spectroscopy indicated a crystalline volume fraction of as high as 40{\%} in films deposited at a substrate temperature 350°C The deposition rate in films was as high as 10{\AA}/sec. This process produced μc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.",
author = "Park, {Kyung Bae} and Jung, {Ji Sim} and Kim, {Jong Man} and Ryu, {Myung Kwan} and Lee, {Sang Yoon} and Kwon, {Jang Yeon}",
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Park, KB, Jung, JS, Kim, JM, Ryu, MK, Lee, SY & Kwon, JY 2007, Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007. Materials Research Society Symposium Proceedings, vol. 989, pp. 399-403, 2007 MRS Spring Meeting, San Francisco, CA, United States, 07/4/9.

Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition. / Park, Kyung Bae; Jung, Ji Sim; Kim, Jong Man; Ryu, Myung Kwan; Lee, Sang Yoon; Kwon, Jang Yeon.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007. 2007. p. 399-403 (Materials Research Society Symposium Proceedings; Vol. 989).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Park KB, Jung JS, Kim JM, Ryu MK, Lee SY, Kwon JY. Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007. 2007. p. 399-403. (Materials Research Society Symposium Proceedings).