Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition

Kyung Bae Park, Ji Sim Jung, Jong Man Kim, Myung Kwan Ryu, Sang Yoon Lee, Jang Yeon Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microcrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4, Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350°C The deposition rate in films was as high as 10Å/sec. This process produced μc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007
Pages399-403
Number of pages5
Publication statusPublished - 2007 Dec 1
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2007 Apr 92007 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
Volume989
ISSN (Print)0272-9172

Other

Other2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period07/4/907/4/13

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, K. B., Jung, J. S., Kim, J. M., Ryu, M. K., Lee, S. Y., & Kwon, J. Y. (2007). Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 (pp. 399-403). (Materials Research Society Symposium Proceedings; Vol. 989).