Many-body effects on modulation-doped InAs/GaAs quantum dots

Joo In Lee, Hyung Gyoo Lee, Eun Joo Shin, Sungkyu Yu, Dongho Kim, Gukhyung Ihm

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Abstract

The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/ GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.

Original languageEnglish
Pages (from-to)2885-2887
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number21
DOIs
Publication statusPublished - 1997 May 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Lee, J. I., Lee, H. G., Shin, E. J., Yu, S., Kim, D., & Ihm, G. (1997). Many-body effects on modulation-doped InAs/GaAs quantum dots. Applied Physics Letters, 70(21), 2885-2887. https://doi.org/10.1063/1.119031