Many-body effects on modulation-doped InAs/GaAs quantum dots

Joo In Lee, Hyung Gyoo Lee, Eun Joo Shin, Sungkyu Yu, Dongho Kim, Gukhyung Ihm

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/ GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.

Original languageEnglish
Pages (from-to)2885-2887
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number21
DOIs
Publication statusPublished - 1997 May 26

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quantum dots
modulation
photoluminescence
carrier lifetime
screening
impurities
excitation
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, J. I., Lee, H. G., Shin, E. J., Yu, S., Kim, D., & Ihm, G. (1997). Many-body effects on modulation-doped InAs/GaAs quantum dots. Applied Physics Letters, 70(21), 2885-2887. https://doi.org/10.1063/1.119031
Lee, Joo In ; Lee, Hyung Gyoo ; Shin, Eun Joo ; Yu, Sungkyu ; Kim, Dongho ; Ihm, Gukhyung. / Many-body effects on modulation-doped InAs/GaAs quantum dots. In: Applied Physics Letters. 1997 ; Vol. 70, No. 21. pp. 2885-2887.
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Lee, JI, Lee, HG, Shin, EJ, Yu, S, Kim, D & Ihm, G 1997, 'Many-body effects on modulation-doped InAs/GaAs quantum dots', Applied Physics Letters, vol. 70, no. 21, pp. 2885-2887. https://doi.org/10.1063/1.119031

Many-body effects on modulation-doped InAs/GaAs quantum dots. / Lee, Joo In; Lee, Hyung Gyoo; Shin, Eun Joo; Yu, Sungkyu; Kim, Dongho; Ihm, Gukhyung.

In: Applied Physics Letters, Vol. 70, No. 21, 26.05.1997, p. 2885-2887.

Research output: Contribution to journalArticle

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