Mapping analysis of single crystal SiC polytypes grown from purified β-SiC powder

Jun Gyu Kim, Si Jung Park, Eunjin Jung, Younghee Kim, Doo Jin Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The most important consideration when growing single crystal silicon carbide by the physical vapor transport method is to minimize defects. To minimize defects caused by temperature gradient, we used β phase SiC powder, which has a low sublimation temperature, and purified the β phase SiC powder to improve the purity of single crystal SiC. Furthermore, we performed thermodynamic computational simulations based on compositions of purified and non-purified β-SiC powders to study the impact of metallic impurities within SiC powder on the composition of single crystal SiC. We grew SiC at temperatures about 200 °C lower than the previous growth temperature using purified β-SiC powder and mapped the phase change behavior of SiC according to different growth temperatures. Moreover, we compared and analyzed the characteristics of SiC polytype formation and crystallinity according to growth temperature. We compared the distribution of defects and dislocations of single crystal 4H SiC grown from purified and non-purified β-SiC powder to study the impact of source purification on defect generation. We also investigated the effect of metallic impurities on the formation of defects and dislocations through content analysis of metallic impurities.

Original languageEnglish
Pages (from-to)687-693
Number of pages7
JournalMetals and Materials International
Volume20
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Powders
Single crystals
single crystals
Growth temperature
Defects
defects
Impurities
impurities
temperature
Sublimation
Chemical analysis
Dislocations (crystals)
sublimation
purification
Silicon carbide
silicon carbides
Thermal gradients
Purification
crystallinity
temperature gradients

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Jun Gyu ; Park, Si Jung ; Jung, Eunjin ; Kim, Younghee ; Choi, Doo Jin. / Mapping analysis of single crystal SiC polytypes grown from purified β-SiC powder. In: Metals and Materials International. 2014 ; Vol. 20, No. 4. pp. 687-693.
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Mapping analysis of single crystal SiC polytypes grown from purified β-SiC powder. / Kim, Jun Gyu; Park, Si Jung; Jung, Eunjin; Kim, Younghee; Choi, Doo Jin.

In: Metals and Materials International, Vol. 20, No. 4, 01.01.2014, p. 687-693.

Research output: Contribution to journalArticle

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