Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy

L. H. Peng; T. P.E. Broekaert; W. Y. Choi; B. R. Bennett; J. H. Smet; V. Diadiuk; S. H. Groves; S. C. Palmateer; N. Pan; C. G. Fonstad

doi:10.1063/1.352310

Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy

L. H. Peng, T. P.E. Broekaert, W. Y. Choi, B. R. Bennett, J. H. Smet, V. Diadiuk, S. H. Groves, S. C. Palmateer, N. Pan, C. G. Fonstad

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In _0.53Ga_0.47As) grown lattice matched to Fe-doped semi-insulating indium phosphide (InP) substrates by various epitaxial growth techniques, including molecular beam epitaxy, liquid phase epitaxy, and metalorganic chemical vapor deposition. It is found that Fe at the InGaAs/InP interface is responsible for exciton-like and polarization sensitive absorption peaks. Both electron and hole emission into the conduction and valence bands, respectively, were observed, and a deep Fe level was identified 0.37 eV below the conduction band edge of bulk Fe:InGaAs. Lowering of the local crystal symmetry due to the interface electric field is proposed to be the mechanism that describes the dipole-allowed interband absorption of 3d transition metal impurities in narrow band gap III-V compounds like the Fe²⁺:InGaAs used in this study. The ambiguity in distinguishing InGaAs quantum well intersubband absorption signals from the Fe interband absorption signals is also addressed.

Original language	English
Pages (from-to)	3664-3669
Number of pages	6
Journal	Journal of Applied Physics
Volume	72
Issue number	8
DOIs	https://doi.org/10.1063/1.352310
Publication status	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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@article{4c30e44e7ec240b88944f03f48904264,

title = "Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy",

abstract = "Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In 0.53Ga0.47As) grown lattice matched to Fe-doped semi-insulating indium phosphide (InP) substrates by various epitaxial growth techniques, including molecular beam epitaxy, liquid phase epitaxy, and metalorganic chemical vapor deposition. It is found that Fe at the InGaAs/InP interface is responsible for exciton-like and polarization sensitive absorption peaks. Both electron and hole emission into the conduction and valence bands, respectively, were observed, and a deep Fe level was identified 0.37 eV below the conduction band edge of bulk Fe:InGaAs. Lowering of the local crystal symmetry due to the interface electric field is proposed to be the mechanism that describes the dipole-allowed interband absorption of 3d transition metal impurities in narrow band gap III-V compounds like the Fe2+:InGaAs used in this study. The ambiguity in distinguishing InGaAs quantum well intersubband absorption signals from the Fe interband absorption signals is also addressed.",

author = "Peng, {L. H.} and Broekaert, {T. P.E.} and Choi, {W. Y.} and Bennett, {B. R.} and Smet, {J. H.} and V. Diadiuk and Groves, {S. H.} and Palmateer, {S. C.} and N. Pan and Fonstad, {C. G.}",

year = "1992",

doi = "10.1063/1.352310",

language = "English",

volume = "72",

pages = "3664--3669",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

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TY - JOUR

T1 - Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy

AU - Peng, L. H.

AU - Broekaert, T. P.E.

AU - Choi, W. Y.

AU - Bennett, B. R.

AU - Smet, J. H.

AU - Diadiuk, V.

AU - Groves, S. H.

AU - Palmateer, S. C.

AU - Pan, N.

AU - Fonstad, C. G.

PY - 1992

Y1 - 1992

N2 - Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In 0.53Ga0.47As) grown lattice matched to Fe-doped semi-insulating indium phosphide (InP) substrates by various epitaxial growth techniques, including molecular beam epitaxy, liquid phase epitaxy, and metalorganic chemical vapor deposition. It is found that Fe at the InGaAs/InP interface is responsible for exciton-like and polarization sensitive absorption peaks. Both electron and hole emission into the conduction and valence bands, respectively, were observed, and a deep Fe level was identified 0.37 eV below the conduction band edge of bulk Fe:InGaAs. Lowering of the local crystal symmetry due to the interface electric field is proposed to be the mechanism that describes the dipole-allowed interband absorption of 3d transition metal impurities in narrow band gap III-V compounds like the Fe2+:InGaAs used in this study. The ambiguity in distinguishing InGaAs quantum well intersubband absorption signals from the Fe interband absorption signals is also addressed.

AB - Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In 0.53Ga0.47As) grown lattice matched to Fe-doped semi-insulating indium phosphide (InP) substrates by various epitaxial growth techniques, including molecular beam epitaxy, liquid phase epitaxy, and metalorganic chemical vapor deposition. It is found that Fe at the InGaAs/InP interface is responsible for exciton-like and polarization sensitive absorption peaks. Both electron and hole emission into the conduction and valence bands, respectively, were observed, and a deep Fe level was identified 0.37 eV below the conduction band edge of bulk Fe:InGaAs. Lowering of the local crystal symmetry due to the interface electric field is proposed to be the mechanism that describes the dipole-allowed interband absorption of 3d transition metal impurities in narrow band gap III-V compounds like the Fe2+:InGaAs used in this study. The ambiguity in distinguishing InGaAs quantum well intersubband absorption signals from the Fe interband absorption signals is also addressed.

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JF - Journal of Applied Physics

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ER -

Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy

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