Mask-free fabrication of inverted-pyramid texture on single-crystalline Si wafer

Bogeum Yang, Myeongkyu Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We here show that inverted-pyramid (IP) textures can be fabricated on single-crystalline Si wafer by simply irradiating the surface with a nanosecond pulsed laser at 532 nm, followed by alkali etching. This process is fundamentally based on the laser-induced melting of material. When exposed to three interfering laser beams, the surface was locally melted in a periodic fashion in accordance with the interference pattern. This generated concave holes on the surface because the melted material overflowed and condensed at the periphery. When subsequently etched by KOH, the internal morphology of the concave holes changed into an IP shape as a result of the position-dependent different etching rates. Uniform IP structures could be obtained with a minimum reflectance of 15.8%.

Original languageEnglish
Pages (from-to)120-124
Number of pages5
JournalOptics and Laser Technology
Volume63
DOIs
Publication statusPublished - 2014 Nov

Fingerprint

pyramids
Masks
masks
textures
Textures
wafers
Crystalline materials
Fabrication
fabrication
Etching
etching
Alkalies
Pulsed lasers
Laser beams
alkalies
pulsed lasers
Melting
melting
laser beams
reflectance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "We here show that inverted-pyramid (IP) textures can be fabricated on single-crystalline Si wafer by simply irradiating the surface with a nanosecond pulsed laser at 532 nm, followed by alkali etching. This process is fundamentally based on the laser-induced melting of material. When exposed to three interfering laser beams, the surface was locally melted in a periodic fashion in accordance with the interference pattern. This generated concave holes on the surface because the melted material overflowed and condensed at the periphery. When subsequently etched by KOH, the internal morphology of the concave holes changed into an IP shape as a result of the position-dependent different etching rates. Uniform IP structures could be obtained with a minimum reflectance of 15.8{\%}.",
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Mask-free fabrication of inverted-pyramid texture on single-crystalline Si wafer. / Yang, Bogeum; Lee, Myeongkyu.

In: Optics and Laser Technology, Vol. 63, 11.2014, p. 120-124.

Research output: Contribution to journalArticle

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AB - We here show that inverted-pyramid (IP) textures can be fabricated on single-crystalline Si wafer by simply irradiating the surface with a nanosecond pulsed laser at 532 nm, followed by alkali etching. This process is fundamentally based on the laser-induced melting of material. When exposed to three interfering laser beams, the surface was locally melted in a periodic fashion in accordance with the interference pattern. This generated concave holes on the surface because the melted material overflowed and condensed at the periphery. When subsequently etched by KOH, the internal morphology of the concave holes changed into an IP shape as a result of the position-dependent different etching rates. Uniform IP structures could be obtained with a minimum reflectance of 15.8%.

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