Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance

Hyun Kyu Seo; Jin Joo Ryu; Su Yeon Lee; Minsoo Park; Seong Geon Park; Wooseok Song; Gun Hwan Kim; Min Kyu Yang

doi:10.1002/aelm.202200161

Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance

Hyun Kyu Seo, Jin Joo Ryu, Su Yeon Lee, Minsoo Park, Seong Geon Park, Wooseok Song, Gun Hwan Kim, Min Kyu Yang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

As a selection device for highly integrated crossbar-type data storage, the chalcogenide-based ovonic threshold switch (OTS) shows high selectivity, fast switching speed, and bi-directional operation ability for stacking with versatile memory devices. These promising performance features of OTS are based on electronic resistance switching through the amorphous chalcogenide active layer. However, there is a need to improve the thermal stability of the chalcogenide material, which is essential for maintaining the amorphous structure, and the minimization of the operation voltage shift phenomenon, which is essential for achieving sufficient endurance performance. In this study, the active layer of Se-doped (at 5%) GeTe (SGT) is investigated as a selection device with the potential for high thermal stability (<400 °C) and extreme endurance performance (>10¹²). The Se introduced into the GeTe (GT) layer compensates for the Te vacancy in the GT layer, making the SGT layer resistant to crystallization in high-thermal-budget circumstances. To achieve extremely high endurance performance, a device structural reconfiguration is proposed that minimizes the operation voltage shift by restricting the surge current in its initial resistance switching stage. The results of analyses of the materials and electrical characteristics of the OTS demonstrate its enhanced performance.

Original language	English
Article number	2200161
Journal	Advanced Electronic Materials
Volume	8
Issue number	9
DOIs	https://doi.org/10.1002/aelm.202200161
Publication status	Published - 2022 Sept

Bibliographical note

Funding Information:
H.K.S. and J.J.R. contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF-2020 M3F3A2A01082498). G.H.K. would like to acknowledge the Korea Research Institute of Chemical Technology (Grant No. SS2221-10; Development of Smart Chemical Materials for IoT Devices).

Funding Information:
H.K.S. and J.J.R. contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF‐2020 M3F3A2A01082498). G.H.K. would like to acknowledge the Korea Research Institute of Chemical Technology (Grant No. SS2221‐10; Development of Smart Chemical Materials for IoT Devices).

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1002/aelm.202200161

Cite this

@article{80b1e541150247e7a57c31e056196b90,

title = "Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance",

abstract = "As a selection device for highly integrated crossbar-type data storage, the chalcogenide-based ovonic threshold switch (OTS) shows high selectivity, fast switching speed, and bi-directional operation ability for stacking with versatile memory devices. These promising performance features of OTS are based on electronic resistance switching through the amorphous chalcogenide active layer. However, there is a need to improve the thermal stability of the chalcogenide material, which is essential for maintaining the amorphous structure, and the minimization of the operation voltage shift phenomenon, which is essential for achieving sufficient endurance performance. In this study, the active layer of Se-doped (at 5%) GeTe (SGT) is investigated as a selection device with the potential for high thermal stability (<400 °C) and extreme endurance performance (>1012). The Se introduced into the GeTe (GT) layer compensates for the Te vacancy in the GT layer, making the SGT layer resistant to crystallization in high-thermal-budget circumstances. To achieve extremely high endurance performance, a device structural reconfiguration is proposed that minimizes the operation voltage shift by restricting the surge current in its initial resistance switching stage. The results of analyses of the materials and electrical characteristics of the OTS demonstrate its enhanced performance.",

author = "Seo, {Hyun Kyu} and Ryu, {Jin Joo} and Lee, {Su Yeon} and Minsoo Park and Park, {Seong Geon} and Wooseok Song and Kim, {Gun Hwan} and Yang, {Min Kyu}",

note = "Funding Information: H.K.S. and J.J.R. contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF-2020 M3F3A2A01082498). G.H.K. would like to acknowledge the Korea Research Institute of Chemical Technology (Grant No. SS2221-10; Development of Smart Chemical Materials for IoT Devices). Funding Information: H.K.S. and J.J.R. contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF‐2020 M3F3A2A01082498). G.H.K. would like to acknowledge the Korea Research Institute of Chemical Technology (Grant No. SS2221‐10; Development of Smart Chemical Materials for IoT Devices). Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

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language = "English",

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AU - Seo, Hyun Kyu

AU - Ryu, Jin Joo

AU - Lee, Su Yeon

AU - Park, Minsoo

AU - Park, Seong Geon

AU - Song, Wooseok

AU - Kim, Gun Hwan

AU - Yang, Min Kyu

N1 - Funding Information: H.K.S. and J.J.R. contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF-2020 M3F3A2A01082498). G.H.K. would like to acknowledge the Korea Research Institute of Chemical Technology (Grant No. SS2221-10; Development of Smart Chemical Materials for IoT Devices). Funding Information: H.K.S. and J.J.R. contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF‐2020 M3F3A2A01082498). G.H.K. would like to acknowledge the Korea Research Institute of Chemical Technology (Grant No. SS2221‐10; Development of Smart Chemical Materials for IoT Devices). Publisher Copyright: © 2022 Wiley-VCH GmbH.

PY - 2022/9

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AB - As a selection device for highly integrated crossbar-type data storage, the chalcogenide-based ovonic threshold switch (OTS) shows high selectivity, fast switching speed, and bi-directional operation ability for stacking with versatile memory devices. These promising performance features of OTS are based on electronic resistance switching through the amorphous chalcogenide active layer. However, there is a need to improve the thermal stability of the chalcogenide material, which is essential for maintaining the amorphous structure, and the minimization of the operation voltage shift phenomenon, which is essential for achieving sufficient endurance performance. In this study, the active layer of Se-doped (at 5%) GeTe (SGT) is investigated as a selection device with the potential for high thermal stability (<400 °C) and extreme endurance performance (>1012). The Se introduced into the GeTe (GT) layer compensates for the Te vacancy in the GT layer, making the SGT layer resistant to crystallization in high-thermal-budget circumstances. To achieve extremely high endurance performance, a device structural reconfiguration is proposed that minimizes the operation voltage shift by restricting the surge current in its initial resistance switching stage. The results of analyses of the materials and electrical characteristics of the OTS demonstrate its enhanced performance.

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Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance

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