Material characterization and process modeling issues of high-k dielectrics for FET applications

Jung Han Kang, Chang Eun Kim, Myoung Seok Kim, Jae Min Myoung, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper, characterization and modeling issues of high-k dielectrics are reviewed and investigated. At first, thermal and plasma enhanced atomic layer deposition (TALD and PE-ALD) process effects on high-k dielectric thin film characteristics is analyzed and neural network (NNet) process modeling methodology applied to high-k thin film processing is reviewed. Characteristic variations of high-k dielectric layers and process variation effects are then examined. Comparison of electrical characteristic variation and post-metallization annealing (PMA) effects on different high-k dielectric thin film grown by molecular beam epitaxy (MOMBE) process is also presented. Annealing effects in different ambient gas environments on device characteristics are also examined. Finally, the nanowire FET using the ZnO nanowire on HfO2 dielectrics is presented for the next-generation FET applications.

Original languageEnglish
Title of host publication2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Pages237-240
Number of pages4
DOIs
Publication statusPublished - 2009 Nov 23
Event2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 - Traverse City, MI, United States
Duration: 2009 Jun 22009 Jun 5

Publication series

Name2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Other

Other2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
CountryUnited States
CityTraverse City, MI
Period09/6/209/6/5

Fingerprint

Field effect transistors
Dielectric films
Thin films
Nanowires
Plasma Gases
Annealing
Atomic layer deposition
Metallizing
Molecular beam epitaxy
Gases
Neural networks
Plasmas
High-k dielectric
Processing

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kang, J. H., Kim, C. E., Kim, M. S., Myoung, J. M., & Yun, I. (2009). Material characterization and process modeling issues of high-k dielectrics for FET applications. In 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 (pp. 237-240). [5167580] (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009). https://doi.org/10.1109/NMDC.2009.5167580
Kang, Jung Han ; Kim, Chang Eun ; Kim, Myoung Seok ; Myoung, Jae Min ; Yun, Ilgu. / Material characterization and process modeling issues of high-k dielectrics for FET applications. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. 2009. pp. 237-240 (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009).
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Kang, JH, Kim, CE, Kim, MS, Myoung, JM & Yun, I 2009, Material characterization and process modeling issues of high-k dielectrics for FET applications. in 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009., 5167580, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, pp. 237-240, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI, United States, 09/6/2. https://doi.org/10.1109/NMDC.2009.5167580

Material characterization and process modeling issues of high-k dielectrics for FET applications. / Kang, Jung Han; Kim, Chang Eun; Kim, Myoung Seok; Myoung, Jae Min; Yun, Ilgu.

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. 2009. p. 237-240 5167580 (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kang JH, Kim CE, Kim MS, Myoung JM, Yun I. Material characterization and process modeling issues of high-k dielectrics for FET applications. In 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. 2009. p. 237-240. 5167580. (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009). https://doi.org/10.1109/NMDC.2009.5167580