Material characterization and process modeling issues of high-k dielectrics for FET applications

Jung Han Kang; Chang Eun Kim; Myoung Seok Kim; Jae Min Myoung; Ilgu Yun

doi:10.1109/NMDC.2009.5167580

Material characterization and process modeling issues of high-k dielectrics for FET applications

Jung Han Kang, Chang Eun Kim, Myoung Seok Kim, Jae Min Myoung, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this paper, characterization and modeling issues of high-k dielectrics are reviewed and investigated. At first, thermal and plasma enhanced atomic layer deposition (TALD and PE-ALD) process effects on high-k dielectric thin film characteristics is analyzed and neural network (NNet) process modeling methodology applied to high-k thin film processing is reviewed. Characteristic variations of high-k dielectric layers and process variation effects are then examined. Comparison of electrical characteristic variation and post-metallization annealing (PMA) effects on different high-k dielectric thin film grown by molecular beam epitaxy (MOMBE) process is also presented. Annealing effects in different ambient gas environments on device characteristics are also examined. Finally, the nanowire FET using the ZnO nanowire on HfO₂ dielectrics is presented for the next-generation FET applications.

Original language	English
Title of host publication	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Pages	237-240
Number of pages	4
DOIs	https://doi.org/10.1109/NMDC.2009.5167580
Publication status	Published - 2009
Event	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 - Traverse City, MI, United States Duration: 2009 Jun 2 → 2009 Jun 5

Publication series

Name	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Other

Other	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Country/Territory	United States
City	Traverse City, MI
Period	09/6/2 → 09/6/5

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/NMDC.2009.5167580

Cite this

Kang, J. H., Kim, C. E., Kim, M. S., Myoung, J. M., & Yun, I. (2009). Material characterization and process modeling issues of high-k dielectrics for FET applications. In 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 (pp. 237-240). [5167580] (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009). https://doi.org/10.1109/NMDC.2009.5167580

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title = "Material characterization and process modeling issues of high-k dielectrics for FET applications",

abstract = "In this paper, characterization and modeling issues of high-k dielectrics are reviewed and investigated. At first, thermal and plasma enhanced atomic layer deposition (TALD and PE-ALD) process effects on high-k dielectric thin film characteristics is analyzed and neural network (NNet) process modeling methodology applied to high-k thin film processing is reviewed. Characteristic variations of high-k dielectric layers and process variation effects are then examined. Comparison of electrical characteristic variation and post-metallization annealing (PMA) effects on different high-k dielectric thin film grown by molecular beam epitaxy (MOMBE) process is also presented. Annealing effects in different ambient gas environments on device characteristics are also examined. Finally, the nanowire FET using the ZnO nanowire on HfO2 dielectrics is presented for the next-generation FET applications.",

author = "Kang, {Jung Han} and Kim, {Chang Eun} and Kim, {Myoung Seok} and Myoung, {Jae Min} and Ilgu Yun",

year = "2009",

doi = "10.1109/NMDC.2009.5167580",

language = "English",

isbn = "9781424446964",

series = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009",

pages = "237--240",

booktitle = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009",

note = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 ; Conference date: 02-06-2009 Through 05-06-2009",

}

Kang, JH, Kim, CE, Kim, MS, Myoung, JM & Yun, I 2009, Material characterization and process modeling issues of high-k dielectrics for FET applications. in 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009., 5167580, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, pp. 237-240, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI, United States, 09/6/2. https://doi.org/10.1109/NMDC.2009.5167580

Material characterization and process modeling issues of high-k dielectrics for FET applications. / Kang, Jung Han; Kim, Chang Eun; Kim, Myoung Seok et al.

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. 2009. p. 237-240 5167580 (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this paper, characterization and modeling issues of high-k dielectrics are reviewed and investigated. At first, thermal and plasma enhanced atomic layer deposition (TALD and PE-ALD) process effects on high-k dielectric thin film characteristics is analyzed and neural network (NNet) process modeling methodology applied to high-k thin film processing is reviewed. Characteristic variations of high-k dielectric layers and process variation effects are then examined. Comparison of electrical characteristic variation and post-metallization annealing (PMA) effects on different high-k dielectric thin film grown by molecular beam epitaxy (MOMBE) process is also presented. Annealing effects in different ambient gas environments on device characteristics are also examined. Finally, the nanowire FET using the ZnO nanowire on HfO2 dielectrics is presented for the next-generation FET applications.

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Material characterization and process modeling issues of high-k dielectrics for FET applications

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