MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers

Woo-Young Choi, T. P.E. Broekaert, C. G. Fonstad

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Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

Original languageEnglish
Pages (from-to)483-485
Number of pages3
JournalElectronics Letters
Issue number5
Publication statusPublished - 1993 Jan 1


All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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