MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers

W. Y. Choi, T. P.E. Broekaert, C. G. Fonstad

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

Original languageEnglish
Pages (from-to)483-485
Number of pages3
JournalElectronics Letters
Volume29
Issue number5
DOIs
Publication statusPublished - 1993 Mar

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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