MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers

Woo-Young Choi, T. P.E. Broekaert, C. G. Fonstad

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

Original languageEnglish
Pages (from-to)483-485
Number of pages3
JournalElectronics Letters
Volume29
Issue number5
DOIs
Publication statusPublished - 1993 Jan 1

Fingerprint

Ridge waveguides
Quantum well lasers
Molecular beam epitaxy
Semiconductor quantum wells
Semiconductor lasers
Etching
Fabrication
Acids

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Choi, Woo-Young ; Broekaert, T. P.E. ; Fonstad, C. G. / MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers. In: Electronics Letters. 1993 ; Vol. 29, No. 5. pp. 483-485.
@article{d9af2bd4e1004062a1e4984177b4a036,
title = "MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers",
abstract = "Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.",
author = "Woo-Young Choi and Broekaert, {T. P.E.} and Fonstad, {C. G.}",
year = "1993",
month = "1",
day = "1",
doi = "10.1049/el:19930323",
language = "English",
volume = "29",
pages = "483--485",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "5",

}

MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers. / Choi, Woo-Young; Broekaert, T. P.E.; Fonstad, C. G.

In: Electronics Letters, Vol. 29, No. 5, 01.01.1993, p. 483-485.

Research output: Contribution to journalArticle

TY - JOUR

T1 - MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers

AU - Choi, Woo-Young

AU - Broekaert, T. P.E.

AU - Fonstad, C. G.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

AB - Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

UR - http://www.scopus.com/inward/record.url?scp=0027908386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027908386&partnerID=8YFLogxK

U2 - 10.1049/el:19930323

DO - 10.1049/el:19930323

M3 - Article

AN - SCOPUS:0027908386

VL - 29

SP - 483

EP - 485

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 5

ER -