MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

E. H. Lee, J. D. Song, S. Y. Kim, M. H. Bae, I. K. Han, S. K. Chang, J. I. Lee, Q. Wang, A. Karim, J. Andersson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown by Stranski-Krastanov (S-K) are ∼36.8 nm and ∼3.1 nm, respectively. The density of QDs is ∼2.5×10 10 cm -2. The size distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ∼159 nm in length, ∼63 nm in width, and ∼11 nm in height. A large reduction of volume of InSb structures between those in the matrix and those on the surface was found. Threading disl°Cations resulting from the Q-dash structures were also observed. This may be attributed to As-Sb exchange.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices IX
Volume8268
DOIs
Publication statusPublished - 2012 Feb 20
EventQuantum Sensing and Nanophotonic Devices IX - San Francisco, CA, United States
Duration: 2012 Jan 222012 Jan 26

Other

OtherQuantum Sensing and Nanophotonic Devices IX
CountryUnited States
CitySan Francisco, CA
Period12/1/2212/1/26

Fingerprint

Epitaxy
Quantum Dots
Molecular beam epitaxy
Semiconductor quantum dots
quantum dots
Wavelength
Gallium Arsenide
Epitaxial growth
Sensor
epitaxy
Migration
sensors
Sensors
Coverage
Substrate
wavelengths
Substrates
matrices
Nanostructures
molecular beam epitaxy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Lee, E. H., Song, J. D., Kim, S. Y., Bae, M. H., Han, I. K., Chang, S. K., ... Andersson, J. (2012). MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors. In Quantum Sensing and Nanophotonic Devices IX (Vol. 8268). [82680J] https://doi.org/10.1117/12.908896
Lee, E. H. ; Song, J. D. ; Kim, S. Y. ; Bae, M. H. ; Han, I. K. ; Chang, S. K. ; Lee, J. I. ; Wang, Q. ; Karim, A. ; Andersson, J. / MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors. Quantum Sensing and Nanophotonic Devices IX. Vol. 8268 2012.
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abstract = "InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown by Stranski-Krastanov (S-K) are ∼36.8 nm and ∼3.1 nm, respectively. The density of QDs is ∼2.5×10 10 cm -2. The size distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ∼159 nm in length, ∼63 nm in width, and ∼11 nm in height. A large reduction of volume of InSb structures between those in the matrix and those on the surface was found. Threading disl°Cations resulting from the Q-dash structures were also observed. This may be attributed to As-Sb exchange.",
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Lee, EH, Song, JD, Kim, SY, Bae, MH, Han, IK, Chang, SK, Lee, JI, Wang, Q, Karim, A & Andersson, J 2012, MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors. in Quantum Sensing and Nanophotonic Devices IX. vol. 8268, 82680J, Quantum Sensing and Nanophotonic Devices IX, San Francisco, CA, United States, 12/1/22. https://doi.org/10.1117/12.908896

MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors. / Lee, E. H.; Song, J. D.; Kim, S. Y.; Bae, M. H.; Han, I. K.; Chang, S. K.; Lee, J. I.; Wang, Q.; Karim, A.; Andersson, J.

Quantum Sensing and Nanophotonic Devices IX. Vol. 8268 2012. 82680J.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

AU - Lee, E. H.

AU - Song, J. D.

AU - Kim, S. Y.

AU - Bae, M. H.

AU - Han, I. K.

AU - Chang, S. K.

AU - Lee, J. I.

AU - Wang, Q.

AU - Karim, A.

AU - Andersson, J.

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N2 - InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown by Stranski-Krastanov (S-K) are ∼36.8 nm and ∼3.1 nm, respectively. The density of QDs is ∼2.5×10 10 cm -2. The size distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ∼159 nm in length, ∼63 nm in width, and ∼11 nm in height. A large reduction of volume of InSb structures between those in the matrix and those on the surface was found. Threading disl°Cations resulting from the Q-dash structures were also observed. This may be attributed to As-Sb exchange.

AB - InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown by Stranski-Krastanov (S-K) are ∼36.8 nm and ∼3.1 nm, respectively. The density of QDs is ∼2.5×10 10 cm -2. The size distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ∼159 nm in length, ∼63 nm in width, and ∼11 nm in height. A large reduction of volume of InSb structures between those in the matrix and those on the surface was found. Threading disl°Cations resulting from the Q-dash structures were also observed. This may be attributed to As-Sb exchange.

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DO - 10.1117/12.908896

M3 - Conference contribution

SN - 9780819489111

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Lee EH, Song JD, Kim SY, Bae MH, Han IK, Chang SK et al. MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors. In Quantum Sensing and Nanophotonic Devices IX. Vol. 8268. 2012. 82680J https://doi.org/10.1117/12.908896