MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

E. H. Lee, J. D. Song, S. Y. Kim, M. H. Bae, I. K. Han, S. K. Chang, J. I. Lee, Q. Wang, A. Karim, J. Andersson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown by Stranski-Krastanov (S-K) are ∼36.8 nm and ∼3.1 nm, respectively. The density of QDs is ∼2.5×10 10 cm -2. The size distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ∼159 nm in length, ∼63 nm in width, and ∼11 nm in height. A large reduction of volume of InSb structures between those in the matrix and those on the surface was found. Threading disl°Cations resulting from the Q-dash structures were also observed. This may be attributed to As-Sb exchange.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices IX
DOIs
Publication statusPublished - 2012
EventQuantum Sensing and Nanophotonic Devices IX - San Francisco, CA, United States
Duration: 2012 Jan 222012 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8268
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices IX
CountryUnited States
CitySan Francisco, CA
Period12/1/2212/1/26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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