Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

Byung Kwon Kang; Yoon Ho Park; Seok Lee; Sang Sam Choi; Jungkeun Lee; Takeshi Kamiya; Seung Han Park

doi:10.1109/68.910505

Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

Byung Kwon Kang, Yoon Ho Park, Seok Lee, Sang Sam Choi, Jungkeun Lee, Takeshi Kamiya, Seung Han Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10^-4 at 1.55 μm for TE polarization by using the proposed technique.

Original language	English
Pages (from-to)	112-114
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1109/68.910505
Publication status	Published - 2001 Feb

Bibliographical note

Funding Information:
Manuscript received April 24, 2000; revised August 10, 2000. This work was supported by the Brain Korea 21 Project and the Advanced Photonics Technology Project. B.-K. Kang and S.-H. Park are with the Department of Physics, Yonsei University, Seoul 120-749, Korea (e-mail: shpark@phya.yonsei.ac.kr). Y. H. Park, S. Lee and S. S. Choi are with the Photonics Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea. J. Lee and T. Kamiya are with the Department of Electronic Engineering, The University of Tokyo, Bunkyo-Ku, Tokyo 113-8656, Japan. Publisher Item Identifier S 1041-1135(01)01059-X.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent",

abstract = "A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10-4 at 1.55 μm for TE polarization by using the proposed technique.",

author = "Kang, {Byung Kwon} and Park, {Yoon Ho} and Seok Lee and Choi, {Sang Sam} and Jungkeun Lee and Takeshi Kamiya and Park, {Seung Han}",

note = "Funding Information: Manuscript received April 24, 2000; revised August 10, 2000. This work was supported by the Brain Korea 21 Project and the Advanced Photonics Technology Project. B.-K. Kang and S.-H. Park are with the Department of Physics, Yonsei University, Seoul 120-749, Korea (e-mail: shpark@phya.yonsei.ac.kr). Y. H. Park, S. Lee and S. S. Choi are with the Photonics Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea. J. Lee and T. Kamiya are with the Department of Electronic Engineering, The University of Tokyo, Bunkyo-Ku, Tokyo 113-8656, Japan. Publisher Item Identifier S 1041-1135(01)01059-X.",

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T1 - Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

AU - Kang, Byung Kwon

AU - Park, Yoon Ho

AU - Lee, Seok

AU - Choi, Sang Sam

AU - Lee, Jungkeun

AU - Kamiya, Takeshi

AU - Park, Seung Han

N1 - Funding Information: Manuscript received April 24, 2000; revised August 10, 2000. This work was supported by the Brain Korea 21 Project and the Advanced Photonics Technology Project. B.-K. Kang and S.-H. Park are with the Department of Physics, Yonsei University, Seoul 120-749, Korea (e-mail: shpark@phya.yonsei.ac.kr). Y. H. Park, S. Lee and S. S. Choi are with the Photonics Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea. J. Lee and T. Kamiya are with the Department of Electronic Engineering, The University of Tokyo, Bunkyo-Ku, Tokyo 113-8656, Japan. Publisher Item Identifier S 1041-1135(01)01059-X.

PY - 2001/2

Y1 - 2001/2

N2 - A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10-4 at 1.55 μm for TE polarization by using the proposed technique.

AB - A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10-4 at 1.55 μm for TE polarization by using the proposed technique.

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JO - IEEE Photonics Technology Letters

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SN - 1041-1135

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Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

Abstract

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