Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation

Chuntaek Park, Ilgu Yun

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

For the applications of next generation display, various types of thin-film transistors (TFTs) are actively researched. Among them, the indium‑gallium‑zinc-oxide (IGZO) TFTs are being focused because of its transparency and other great electrical properties. However, the effect of mechanical stress on amorphous IGZO (a-IGZO) TFTs has to be studied for the foldable display application. In this paper, we examine the reliability of mechanical stress on a-IGZO TFTs and report the degradation mechanism by analyzing sub-gap density of states (DOSs) extracted from the stress simulation model. The simulation model has been implemented through TCAD simulation tool and the electrical characteristics based on the extracted parameters are compared with the measured data.

Original languageEnglish
Pages (from-to)592-595
Number of pages4
JournalMicroelectronics Reliability
Volume76-77
DOIs
Publication statusPublished - 2017 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation'. Together they form a unique fingerprint.

  • Cite this