Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation

Chuntaek Park, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

For the applications of next generation display, various types of thin-film transistors (TFTs) are actively researched. Among them, the indium‑gallium‑zinc-oxide (IGZO) TFTs are being focused because of its transparency and other great electrical properties. However, the effect of mechanical stress on amorphous IGZO (a-IGZO) TFTs has to be studied for the foldable display application. In this paper, we examine the reliability of mechanical stress on a-IGZO TFTs and report the degradation mechanism by analyzing sub-gap density of states (DOSs) extracted from the stress simulation model. The simulation model has been implemented through TCAD simulation tool and the electrical characteristics based on the extracted parameters are compared with the measured data.

Original languageEnglish
Pages (from-to)592-595
Number of pages4
JournalMicroelectronics Reliability
Volume76-77
DOIs
Publication statusPublished - 2017 Sep 1

Fingerprint

Amorphous films
Thin film transistors
transistors
degradation
Degradation
Defects
defects
thin films
Oxide films
Display devices
oxides
simulation
Transparency
Electric properties
electrical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{82832c7dc7f741df903f5cedffa9d8f2,
title = "Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation",
abstract = "For the applications of next generation display, various types of thin-film transistors (TFTs) are actively researched. Among them, the indium‑gallium‑zinc-oxide (IGZO) TFTs are being focused because of its transparency and other great electrical properties. However, the effect of mechanical stress on amorphous IGZO (a-IGZO) TFTs has to be studied for the foldable display application. In this paper, we examine the reliability of mechanical stress on a-IGZO TFTs and report the degradation mechanism by analyzing sub-gap density of states (DOSs) extracted from the stress simulation model. The simulation model has been implemented through TCAD simulation tool and the electrical characteristics based on the extracted parameters are compared with the measured data.",
author = "Chuntaek Park and Ilgu Yun",
year = "2017",
month = "9",
day = "1",
doi = "10.1016/j.microrel.2017.06.094",
language = "English",
volume = "76-77",
pages = "592--595",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",

}

Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation. / Park, Chuntaek; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 76-77, 01.09.2017, p. 592-595.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation

AU - Park, Chuntaek

AU - Yun, Ilgu

PY - 2017/9/1

Y1 - 2017/9/1

N2 - For the applications of next generation display, various types of thin-film transistors (TFTs) are actively researched. Among them, the indium‑gallium‑zinc-oxide (IGZO) TFTs are being focused because of its transparency and other great electrical properties. However, the effect of mechanical stress on amorphous IGZO (a-IGZO) TFTs has to be studied for the foldable display application. In this paper, we examine the reliability of mechanical stress on a-IGZO TFTs and report the degradation mechanism by analyzing sub-gap density of states (DOSs) extracted from the stress simulation model. The simulation model has been implemented through TCAD simulation tool and the electrical characteristics based on the extracted parameters are compared with the measured data.

AB - For the applications of next generation display, various types of thin-film transistors (TFTs) are actively researched. Among them, the indium‑gallium‑zinc-oxide (IGZO) TFTs are being focused because of its transparency and other great electrical properties. However, the effect of mechanical stress on amorphous IGZO (a-IGZO) TFTs has to be studied for the foldable display application. In this paper, we examine the reliability of mechanical stress on a-IGZO TFTs and report the degradation mechanism by analyzing sub-gap density of states (DOSs) extracted from the stress simulation model. The simulation model has been implemented through TCAD simulation tool and the electrical characteristics based on the extracted parameters are compared with the measured data.

UR - http://www.scopus.com/inward/record.url?scp=85022080459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85022080459&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2017.06.094

DO - 10.1016/j.microrel.2017.06.094

M3 - Article

AN - SCOPUS:85022080459

VL - 76-77

SP - 592

EP - 595

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -