Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

Richard H. Kim; Cheolmin Park

doi:10.1007/978-94-024-0841-6_11

Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

Richard H. Kim, Cheolmin Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

Original language	English
Pages (from-to)	227-253
Number of pages	27
Journal	Topics in Applied Physics
Volume	131
DOIs	https://doi.org/10.1007/978-94-024-0841-6_11
Publication status	Published - 2016

Bibliographical note

Publisher Copyright:
© Springer Science+Business Media Dordrecht 2016.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1007/978-94-024-0841-6_11

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@article{329eff1576b6492ba650c5af86d01bc9,

title = "Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers",

abstract = "Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.",

author = "Kim, {Richard H.} and Cheolmin Park",

note = "Publisher Copyright: {\textcopyright} Springer Science+Business Media Dordrecht 2016.",

year = "2016",

doi = "10.1007/978-94-024-0841-6_11",

language = "English",

volume = "131",

pages = "227--253",

journal = "Topics in Applied Physics",

issn = "0303-4216",

publisher = "Springer Verlag",

}

TY - JOUR

T1 - Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

AU - Kim, Richard H.

AU - Park, Cheolmin

N1 - Publisher Copyright: © Springer Science+Business Media Dordrecht 2016.

PY - 2016

Y1 - 2016

N2 - Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

AB - Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

UR - http://www.scopus.com/inward/record.url?scp=84986223798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84986223798&partnerID=8YFLogxK

U2 - 10.1007/978-94-024-0841-6_11

DO - 10.1007/978-94-024-0841-6_11

M3 - Article

AN - SCOPUS:84986223798

VL - 131

SP - 227

EP - 253

JO - Topics in Applied Physics

JF - Topics in Applied Physics

SN - 0303-4216

ER -

Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

Abstract

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