Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

Richard H. Kim, Cheolmin Park

Research output: Contribution to journalArticle

Abstract

Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

Original languageEnglish
Pages (from-to)227-253
Number of pages27
JournalTopics in Applied Physics
Volume131
DOIs
Publication statusPublished - 2016 Jan 1

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field effect transistors
polymers
nanoindentation
flexibility
mechanical properties
fabrication
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers. / Kim, Richard H.; Park, Cheolmin.

In: Topics in Applied Physics, Vol. 131, 01.01.2016, p. 227-253.

Research output: Contribution to journalArticle

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