Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

Richard H. Kim; Cheolmin Park

doi:10.1007/978-94-024-0841-6_11

Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

Richard H. Kim, Cheolmin Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

Original language	English
Pages (from-to)	227-253
Number of pages	27
Journal	Topics in Applied Physics
Volume	131
DOIs	https://doi.org/10.1007/978-94-024-0841-6_11
Publication status	Published - 2016

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government (MEST) (No.2014R1A2A1A01005046).

Publisher Copyright:
© Springer Science+Business Media Dordrecht 2016.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1007/978-94-024-0841-6_11

Cite this

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title = "Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers",

abstract = "Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.",

author = "Kim, {Richard H.} and Cheolmin Park",

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doi = "10.1007/978-94-024-0841-6_11",

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N2 - Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

AB - Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

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Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers

Abstract

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