TY - JOUR
T1 - Mechanically flexible non-volatile field effect transistor memories with ferroelectric polymers
AU - Kim, Richard H.
AU - Park, Cheolmin
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.
AB - Great efforts have been devoted to improve the properties of non-volatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.
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U2 - 10.1007/978-94-024-0841-6_11
DO - 10.1007/978-94-024-0841-6_11
M3 - Article
AN - SCOPUS:84986223798
VL - 131
SP - 227
EP - 253
JO - Topics in Applied Physics
JF - Topics in Applied Physics
SN - 0303-4216
ER -