Great efforts have been devoted to improve the properties of nonvolatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.
|Title of host publication||Topics in Applied Physics|
|Number of pages||26|
|Publication status||Published - 2020|
|Name||Topics in Applied Physics|
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No.2014R1A2A1A01005046).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)