This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2 /V s, subthreshold voltage of 100 mV/dec and on/off ratios > 107. The inverter shows good performance and voltage gains of ∼2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.
Bibliographical noteFunding Information:
This work was supported by the IT R&D program of Ministry of Knowledge Economy of Korea (MKE, Grant No. 2008-F024-01, Development of Mobile Flexible IOP Platform) and the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant Nos. 331-2008-1-D00265 and 2009-0083540).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)