Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers

Seoung Ki Lee; Houk Jang; Musarrat Hasan; Jae Bon Koo; Jong Hyun Ahn

doi:10.1063/1.3409475

Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers

Seoung Ki Lee, Houk Jang, Musarrat Hasan, Jae Bon Koo, Jong Hyun Ahn

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm² /V s, subthreshold voltage of 100 mV/dec and on/off ratios > 10⁷. The inverter shows good performance and voltage gains of ∼2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.

Original language	English
Article number	173501
Journal	Applied Physics Letters
Volume	96
Issue number	17
DOIs	https://doi.org/10.1063/1.3409475
Publication status	Published - 2010 Apr 26

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of Ministry of Knowledge Economy of Korea (MKE, Grant No. 2008-F024-01, Development of Mobile Flexible IOP Platform) and the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant Nos. 331-2008-1-D00265 and 2009-0083540).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3409475

Cite this

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title = "Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers",

abstract = "This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2 /V s, subthreshold voltage of 100 mV/dec and on/off ratios > 107. The inverter shows good performance and voltage gains of ∼2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.",

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AU - Koo, Jae Bon

AU - Ahn, Jong Hyun

N1 - Funding Information: This work was supported by the IT R&D program of Ministry of Knowledge Economy of Korea (MKE, Grant No. 2008-F024-01, Development of Mobile Flexible IOP Platform) and the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant Nos. 331-2008-1-D00265 and 2009-0083540).

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Y1 - 2010/4/26

N2 - This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2 /V s, subthreshold voltage of 100 mV/dec and on/off ratios > 107. The inverter shows good performance and voltage gains of ∼2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.

AB - This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2 /V s, subthreshold voltage of 100 mV/dec and on/off ratios > 107. The inverter shows good performance and voltage gains of ∼2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.

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Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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