Mechanism of manganese (mono and di) telluride thin-film formation and properties

Raj Kishore Sharma; Gurmeet Singh; Yong Gun Shul; Hansung Kim

doi:10.1016/j.physb.2006.08.031

Mechanism of manganese (mono and di) telluride thin-film formation and properties

Raj Kishore Sharma, Gurmeet Singh, Yong Gun Shul, Hansung Kim

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO₄ and TeO₂. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn²⁺, Te⁴⁺ and combined Mn²⁺ and Te⁴⁺. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

Original language	English
Pages (from-to)	314-319
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	390
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physb.2006.08.031
Publication status	Published - 2007 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2006.08.031

Cite this

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abstract = "Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO4 and TeO2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn2+, Te4+ and combined Mn2+ and Te4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.",

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AU - Sharma, Raj Kishore

AU - Singh, Gurmeet

AU - Shul, Yong Gun

AU - Kim, Hansung

PY - 2007/3/1

Y1 - 2007/3/1

N2 - Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO4 and TeO2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn2+, Te4+ and combined Mn2+ and Te4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

AB - Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO4 and TeO2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn2+, Te4+ and combined Mn2+ and Te4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

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Mechanism of manganese (mono and di) telluride thin-film formation and properties

Abstract

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