Mechanism of manganese (mono and di) telluride thin-film formation and properties

Raj Kishore Sharma, Gurmeet Singh, Yong Gun Shul, Hansung Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO4 and TeO2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn2+, Te4+ and combined Mn2+ and Te4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

Original languageEnglish
Pages (from-to)314-319
Number of pages6
JournalPhysica B: Condensed Matter
Volume390
Issue number1-2
DOIs
Publication statusPublished - 2007 Mar 1

Fingerprint

tellurides
Manganese
manganese
Thin films
thin films
Manganese oxide
manganese oxides
counters
Electron microscopes
electron microscopes
aqueous solutions
Scanning
magnetic permeability
X ray diffraction
Electrodes
acids
scanning
electrodes
Acids
diffraction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO4 and TeO2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn2+, Te4+ and combined Mn2+ and Te4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.",
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Mechanism of manganese (mono and di) telluride thin-film formation and properties. / Sharma, Raj Kishore; Singh, Gurmeet; Shul, Yong Gun; Kim, Hansung.

In: Physica B: Condensed Matter, Vol. 390, No. 1-2, 01.03.2007, p. 314-319.

Research output: Contribution to journalArticle

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AU - Singh, Gurmeet

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