Mechanism of silicon dioxide decoupled plasma nitridation

Sang Woo Lim, Tien Ying Luo, Jack Jiang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The mechanism for decoupled plasma nitridation of silicon dioxide thin films is investigated using experimental measurements of nitrogen depth profile and integrated plasma equipment - surface physics modeling. Results show that neutral N atoms and N2+ ions are the primary agents responsible for dielectric film nitridation. N atoms adsorb at the dielectric surface and diffuse into the bulk film. N2+ ions are deposited in an ion-implantation like manner and broaden the nitrogen profile considerably. The surface nitrogen concentration can be enhanced by increasing the plasma source power. Nitrogen diffusion coefficient in the dielectric film decreases with increasing film thickness.

Original languageEnglish
Pages (from-to)L413-L415
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number12-16
DOIs
Publication statusPublished - 2006 May 17

Fingerprint

silicon dioxide
nitrogen
plasma power sources
profiles
atoms
ion implantation
ions
film thickness
diffusion coefficient
physics
thin films

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Lim, Sang Woo ; Luo, Tien Ying ; Jiang, Jack. / Mechanism of silicon dioxide decoupled plasma nitridation. In: Japanese Journal of Applied Physics, Part 2: Letters. 2006 ; Vol. 45, No. 12-16. pp. L413-L415.
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Mechanism of silicon dioxide decoupled plasma nitridation. / Lim, Sang Woo; Luo, Tien Ying; Jiang, Jack.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 12-16, 17.05.2006, p. L413-L415.

Research output: Contribution to journalArticle

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