Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

Jungwoo Oh, I. Ok, C. Y. Kang, M. Jamil, S. H. Lee, W. Y. Loh, J. Huang, B. Sassman, L. Smith, S. Parthasarathy, B. E. Coss, W. H. Choi, H. D. Lee, M. Cho, S. K. Banerjee, P. Majhi, P. D. Kirsch, H. H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D it) and specific contact resistivity (ρc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective masses of electrons, which populate L valleys are large for conductivity and small for the density of states in conventional (100) [110] channel directions, resulting in low electron mobility and carrier concentration in Ge-based nMOSFETs.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages238-239
Number of pages2
Publication statusPublished - 2009 Nov 16
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/16 → 09/6/18

Fingerprint

Electron transport properties
Electron mobility
Carrier concentration
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Oh, J., Ok, I., Kang, C. Y., Jamil, M., Lee, S. H., Loh, W. Y., ... Jammy, R. (2009). Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 238-239). [5200612] (Digest of Technical Papers - Symposium on VLSI Technology).
Oh, Jungwoo ; Ok, I. ; Kang, C. Y. ; Jamil, M. ; Lee, S. H. ; Loh, W. Y. ; Huang, J. ; Sassman, B. ; Smith, L. ; Parthasarathy, S. ; Coss, B. E. ; Choi, W. H. ; Lee, H. D. ; Cho, M. ; Banerjee, S. K. ; Majhi, P. ; Kirsch, P. D. ; Tseng, H. H. ; Jammy, R. / Mechanisms for low on-state current of Ge (SiGe) nMOSFETs : A comparative study on gate stack, resistance, and orientation-dependent effective masses. 2009 Symposium on VLSI Technology, VLSIT 2009. 2009. pp. 238-239 (Digest of Technical Papers - Symposium on VLSI Technology).
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title = "Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses",
abstract = "We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D it) and specific contact resistivity (ρc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective masses of electrons, which populate L valleys are large for conductivity and small for the density of states in conventional (100) [110] channel directions, resulting in low electron mobility and carrier concentration in Ge-based nMOSFETs.",
author = "Jungwoo Oh and I. Ok and Kang, {C. Y.} and M. Jamil and Lee, {S. H.} and Loh, {W. Y.} and J. Huang and B. Sassman and L. Smith and S. Parthasarathy and Coss, {B. E.} and Choi, {W. H.} and Lee, {H. D.} and M. Cho and Banerjee, {S. K.} and P. Majhi and Kirsch, {P. D.} and Tseng, {H. H.} and R. Jammy",
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Oh, J, Ok, I, Kang, CY, Jamil, M, Lee, SH, Loh, WY, Huang, J, Sassman, B, Smith, L, Parthasarathy, S, Coss, BE, Choi, WH, Lee, HD, Cho, M, Banerjee, SK, Majhi, P, Kirsch, PD, Tseng, HH & Jammy, R 2009, Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses. in 2009 Symposium on VLSI Technology, VLSIT 2009., 5200612, Digest of Technical Papers - Symposium on VLSI Technology, pp. 238-239, 2009 Symposium on VLSI Technology, VLSIT 2009, Kyoto, Japan, 09/6/16.

Mechanisms for low on-state current of Ge (SiGe) nMOSFETs : A comparative study on gate stack, resistance, and orientation-dependent effective masses. / Oh, Jungwoo; Ok, I.; Kang, C. Y.; Jamil, M.; Lee, S. H.; Loh, W. Y.; Huang, J.; Sassman, B.; Smith, L.; Parthasarathy, S.; Coss, B. E.; Choi, W. H.; Lee, H. D.; Cho, M.; Banerjee, S. K.; Majhi, P.; Kirsch, P. D.; Tseng, H. H.; Jammy, R.

2009 Symposium on VLSI Technology, VLSIT 2009. 2009. p. 238-239 5200612 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Mechanisms for low on-state current of Ge (SiGe) nMOSFETs

T2 - A comparative study on gate stack, resistance, and orientation-dependent effective masses

AU - Oh, Jungwoo

AU - Ok, I.

AU - Kang, C. Y.

AU - Jamil, M.

AU - Lee, S. H.

AU - Loh, W. Y.

AU - Huang, J.

AU - Sassman, B.

AU - Smith, L.

AU - Parthasarathy, S.

AU - Coss, B. E.

AU - Choi, W. H.

AU - Lee, H. D.

AU - Cho, M.

AU - Banerjee, S. K.

AU - Majhi, P.

AU - Kirsch, P. D.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2009/11/16

Y1 - 2009/11/16

N2 - We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D it) and specific contact resistivity (ρc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective masses of electrons, which populate L valleys are large for conductivity and small for the density of states in conventional (100) [110] channel directions, resulting in low electron mobility and carrier concentration in Ge-based nMOSFETs.

AB - We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D it) and specific contact resistivity (ρc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective masses of electrons, which populate L valleys are large for conductivity and small for the density of states in conventional (100) [110] channel directions, resulting in low electron mobility and carrier concentration in Ge-based nMOSFETs.

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M3 - Conference contribution

AN - SCOPUS:71049190976

SN - 9784863480094

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 238

EP - 239

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

ER -

Oh J, Ok I, Kang CY, Jamil M, Lee SH, Loh WY et al. Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses. In 2009 Symposium on VLSI Technology, VLSIT 2009. 2009. p. 238-239. 5200612. (Digest of Technical Papers - Symposium on VLSI Technology).

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