Abstract
We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D it) and specific contact resistivity (ρc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective masses of electrons, which populate L valleys are large for conductivity and small for the density of states in conventional (100) [110] channel directions, resulting in low electron mobility and carrier concentration in Ge-based nMOSFETs.
| Original language | English |
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| Title of host publication | 2009 Symposium on VLSI Technology, VLSIT 2009 |
| Pages | 238-239 |
| Number of pages | 2 |
| Publication status | Published - 2009 Nov 16 |
| Event | 2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18 |
Publication series
| Name | Digest of Technical Papers - Symposium on VLSI Technology |
|---|---|
| ISSN (Print) | 0743-1562 |
Other
| Other | 2009 Symposium on VLSI Technology, VLSIT 2009 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 09/6/16 → 09/6/18 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
Oh, J., Ok, I., Kang, C. Y., Jamil, M., Lee, S. H., Loh, W. Y., Huang, J., Sassman, B., Smith, L., Parthasarathy, S., Coss, B. E., Choi, W. H., Lee, H. D., Cho, M., Banerjee, S. K., Majhi, P., Kirsch, P. D., Tseng, H. H., & Jammy, R. (2009). Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 238-239). [5200612] (Digest of Technical Papers - Symposium on VLSI Technology).