@inproceedings{1c79b06cd8394bd8bcb289ad50c6da76,
title = "Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses",
abstract = "We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D it) and specific contact resistivity (ρc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective masses of electrons, which populate L valleys are large for conductivity and small for the density of states in conventional (100) [110] channel directions, resulting in low electron mobility and carrier concentration in Ge-based nMOSFETs.",
author = "J. Oh and I. Ok and Kang, {C. Y.} and M. Jamil and Lee, {S. H.} and Loh, {W. Y.} and J. Huang and B. Sassman and L. Smith and S. Parthasarathy and Coss, {B. E.} and Choi, {W. H.} and Lee, {H. D.} and M. Cho and Banerjee, {S. K.} and P. Majhi and Kirsch, {P. D.} and Tseng, {H. H.} and R. Jammy",
year = "2009",
language = "English",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "238--239",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}