Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

J. Oh, I. Ok, C. Y. Kang, M. Jamil, S. H. Lee, W. Y. Loh, J. Huang, B. Sassman, L. Smith, S. Parthasarathy, B. E. Coss, W. H. Choi, H. D. Lee, M. Cho, S. K. Banerjee, P. Majhi, P. D. Kirsch, H. H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (D it) and specific contact resistivity (ρc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective masses of electrons, which populate L valleys are large for conductivity and small for the density of states in conventional (100) [110] channel directions, resulting in low electron mobility and carrier concentration in Ge-based nMOSFETs.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages238-239
Number of pages2
Publication statusPublished - 2009 Nov 16
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/1609/6/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Oh, J., Ok, I., Kang, C. Y., Jamil, M., Lee, S. H., Loh, W. Y., Huang, J., Sassman, B., Smith, L., Parthasarathy, S., Coss, B. E., Choi, W. H., Lee, H. D., Cho, M., Banerjee, S. K., Majhi, P., Kirsch, P. D., Tseng, H. H., & Jammy, R. (2009). Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 238-239). [5200612] (Digest of Technical Papers - Symposium on VLSI Technology).