Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

J. Huang, P. D. Kirsch, J. Oh, S. H. Lee, J. Price, P. Majhi, H. R. Harris, D. C. Gilmer, D. Q. Kelly, P. Sivasubramani, G. Bersuker, D. Heh, C. Young, C. S. Park, Y. N. Tan, N. Goel, C. Park, P. Y. Hung, P. Lysaght, K. J. ChoiB. J. Cho, H. H. Tseng, B. H. Lee, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

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Engineering & Materials Science