Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

I. Sak Lee, Young Jun Tak, Byung Ha Kang, Hyukjoon Yoo, Sujin Jung, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a promising material for the channel layer in thin-film transistors (TFTs), require a relatively high thermal annealing temperature to achieve switching characteristics through the formation of metal-oxygen (M-O) bonding (i.e., the activation process). The activation process is usually carried out at a temperature above 300 °C; however, achieving activation at lower temperatures is essential for realizing flexible display technologies. Here, a facile, low-cost, and novel technique using cellophane tape for the activation of a-IGZO films at a low annealing temperature is reported. In terms of mechanochemistry, mechanical pulling of the cellophane tape induces reactive radicals on the a-IGZO film surface, which can give rise to improvements in the properties of the a-IGZO films, leading to an increase in the number of M-O bonds and the carrier concentration via radical reactions, even at 200 °C. As a result, the a-IGZO TFTs, compared to conventionally annealed a-IGZO TFTs, exhibited improved electrical performances, such as mobility, on/off current ratio, and threshold voltage shift (under positive bias temperature and negative bias temperature stress for 10,000 s at 50 °C) from 8.25 to 12.81 cm2/(V·s), 2.85 × 107 to 1.21 × 108, 6.81 to 3.24 V, and -6.68 to -4.93 V, respectively.

Original languageEnglish
Pages (from-to)19123-19129
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number16
Publication statusPublished - 2020 Apr 22

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

Publisher Copyright:
© 2020 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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