Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

Hyo June Kim, Seung Yong Cha, Doo Jin Choi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al2O3/5 nm La2O3/5 nm Al2O3 and 15 nm Al2O3/5 nm La2O3/5, 7.5, and 10 nm Al2O3 multi-stack films, respectively. The optimized structure was 15 nm Al2O3 blocking oxide/5 nm La2O3 trap layer/5 nm Al2O3 tunnel oxide film. The maximum memory window of this film of about 1.12 V was observed at 11 V for 10 ms in program mode and at -13 V for 100 ms in erase mode. At these program/erase conditions, the threshold voltage of the 15 nm Al2O3/5 nm La2O3/5 nm Al2O3 film did not change for up to about 104 cycles. Although the value of the memory window in this structure was not large, it is thought that a memory window of 1.12 V is acceptable in the flash memory devices due to a recently improved sense amplifier.

Original languageEnglish
Pages (from-to)9-12
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume13
Issue number1
DOIs
Publication statusPublished - 2010 Feb 1

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Multilayer films
Oxides
tunnels
Tunnels
Data storage equipment
oxides
traps
Flash memory
Threshold voltage
threshold voltage
Oxide films
flash
oxide films
amplifiers
cycles

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses",
abstract = "In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al2O3/5 nm La2O3/5 nm Al2O3 and 15 nm Al2O3/5 nm La2O3/5, 7.5, and 10 nm Al2O3 multi-stack films, respectively. The optimized structure was 15 nm Al2O3 blocking oxide/5 nm La2O3 trap layer/5 nm Al2O3 tunnel oxide film. The maximum memory window of this film of about 1.12 V was observed at 11 V for 10 ms in program mode and at -13 V for 100 ms in erase mode. At these program/erase conditions, the threshold voltage of the 15 nm Al2O3/5 nm La2O3/5 nm Al2O3 film did not change for up to about 104 cycles. Although the value of the memory window in this structure was not large, it is thought that a memory window of 1.12 V is acceptable in the flash memory devices due to a recently improved sense amplifier.",
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Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses. / Kim, Hyo June; Cha, Seung Yong; Choi, Doo Jin.

In: Materials Science in Semiconductor Processing, Vol. 13, No. 1, 01.02.2010, p. 9-12.

Research output: Contribution to journalArticle

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AB - In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al2O3/5 nm La2O3/5 nm Al2O3 and 15 nm Al2O3/5 nm La2O3/5, 7.5, and 10 nm Al2O3 multi-stack films, respectively. The optimized structure was 15 nm Al2O3 blocking oxide/5 nm La2O3 trap layer/5 nm Al2O3 tunnel oxide film. The maximum memory window of this film of about 1.12 V was observed at 11 V for 10 ms in program mode and at -13 V for 100 ms in erase mode. At these program/erase conditions, the threshold voltage of the 15 nm Al2O3/5 nm La2O3/5 nm Al2O3 film did not change for up to about 104 cycles. Although the value of the memory window in this structure was not large, it is thought that a memory window of 1.12 V is acceptable in the flash memory devices due to a recently improved sense amplifier.

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