Al2O3/La2O3/Al 2O3 (ALA) and Al2O3/LaAlO 3/Al2O3 (A/LAO/A) multi-stacked films were deposited on Si substrates by MOCVD. No interfacial layers (Al xSiyOz) were observed in TEM images, and the thickness ratio of the tunnel oxide (bottom oxide), trap layer (middle oxide), and blocking oxide (top oxide) was about (1:1.3:3) in both films. Memory windows of the (ALA) and (A/LAO/A) films were 1.31 V and 3.13 V, respectively. Each value in the program/erase cycle test was maintained for up to 104 cycles.
Bibliographical noteFunding Information:
This research was supported by Hynix Semiconductor Inc. in Republic of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry