Memory characteristics of multi-stacked thin films using La 2O3 and LaAlO3 as charge trap layer

Hyo June Kim; Doo Jin Choi

doi:10.1016/j.ceramint.2010.10.010

Memory characteristics of multi-stacked thin films using La ₂O₃ and LaAlO₃ as charge trap layer

Hyo June Kim, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Al₂O₃/La₂O₃/Al ₂O₃ (ALA) and Al₂O₃/LaAlO ₃/Al₂O₃ (A/LAO/A) multi-stacked films were deposited on Si substrates by MOCVD. No interfacial layers (Al _xSi_yO_z) were observed in TEM images, and the thickness ratio of the tunnel oxide (bottom oxide), trap layer (middle oxide), and blocking oxide (top oxide) was about (1:1.3:3) in both films. Memory windows of the (ALA) and (A/LAO/A) films were 1.31 V and 3.13 V, respectively. Each value in the program/erase cycle test was maintained for up to 10⁴ cycles.

Original language	English
Pages (from-to)	1127-1131
Number of pages	5
Journal	Ceramics International
Volume	37
Issue number	3
DOIs	https://doi.org/10.1016/j.ceramint.2010.10.010
Publication status	Published - 2011 Apr

Bibliographical note

Funding Information:
This research was supported by Hynix Semiconductor Inc. in Republic of Korea.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2010.10.010

Cite this

@article{36474aef353e49498dfb6b293c410411,

title = "Memory characteristics of multi-stacked thin films using La 2O3 and LaAlO3 as charge trap layer",

abstract = "Al2O3/La2O3/Al 2O3 (ALA) and Al2O3/LaAlO 3/Al2O3 (A/LAO/A) multi-stacked films were deposited on Si substrates by MOCVD. No interfacial layers (Al xSiyOz) were observed in TEM images, and the thickness ratio of the tunnel oxide (bottom oxide), trap layer (middle oxide), and blocking oxide (top oxide) was about (1:1.3:3) in both films. Memory windows of the (ALA) and (A/LAO/A) films were 1.31 V and 3.13 V, respectively. Each value in the program/erase cycle test was maintained for up to 104 cycles.",

author = "Kim, {Hyo June} and Choi, {Doo Jin}",

note = "Funding Information: This research was supported by Hynix Semiconductor Inc. in Republic of Korea.",

year = "2011",

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doi = "10.1016/j.ceramint.2010.10.010",

language = "English",

volume = "37",

pages = "1127--1131",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

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T1 - Memory characteristics of multi-stacked thin films using La 2O3 and LaAlO3 as charge trap layer

AU - Kim, Hyo June

AU - Choi, Doo Jin

N1 - Funding Information: This research was supported by Hynix Semiconductor Inc. in Republic of Korea.

PY - 2011/4

Y1 - 2011/4

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AB - Al2O3/La2O3/Al 2O3 (ALA) and Al2O3/LaAlO 3/Al2O3 (A/LAO/A) multi-stacked films were deposited on Si substrates by MOCVD. No interfacial layers (Al xSiyOz) were observed in TEM images, and the thickness ratio of the tunnel oxide (bottom oxide), trap layer (middle oxide), and blocking oxide (top oxide) was about (1:1.3:3) in both films. Memory windows of the (ALA) and (A/LAO/A) films were 1.31 V and 3.13 V, respectively. Each value in the program/erase cycle test was maintained for up to 104 cycles.

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