Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by Fowler-Nordheim tunneling

Seung Yong Cha, Hyo June Kim, Doo Jin Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Charge Trap Flash(CTF) memory device is the replace candidate for NAND Flash devices. In this study, we fabricated Pt/Al2O 3/LaAlO3/SiO2/Si structures with various tunnel oxide thicknesses. The memory windows of the multilayer structures were about 3V, which is sufficient for memory application in low program/erase voltages. Reliability test showed threshold voltage change of less than 10% under 10 4 cycles of program/erase pulses. The I-V measurement of the capacitor structure indicated about 10-4A/cm2 of leakage current at 1V.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1210-1211
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Cha, S. Y., Kim, H. J., & Choi, D. J. (2010). Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by Fowler-Nordheim tunneling. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1210-1211). [5424946] https://doi.org/10.1109/INEC.2010.5424946