Memory effect in an aluminum single-electron floating-node memory cell

Jinhee Kim; Sangchul Oh; Kyung Hwa Yoo; Jong Wan Park; Jeong O. Lee; Jung Bum Choi; Se Il Park; Ju Jin Kim

doi:10.1143/jjap.39.4826

Memory effect in an aluminum single-electron floating-node memory cell

Jinhee Kim, Sangchul Oh, Kyung Hwa Yoo, Jong Wan Park, Jeong O. Lee, Jung Bum Choi, Se Il Park, Ju Jin Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.

Original language	English
Pages (from-to)	4826-4829
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	8
DOIs	https://doi.org/10.1143/jjap.39.4826
Publication status	Published - 2000 Aug

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.39.4826

Fingerprint Dive into the research topics of 'Memory effect in an aluminum single-electron floating-node memory cell'. Together they form a unique fingerprint.

Cite this

@article{cf656e0a744b46808c93eb555d37f547,

title = "Memory effect in an aluminum single-electron floating-node memory cell",

abstract = "We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.",

author = "Jinhee Kim and Sangchul Oh and Yoo, {Kyung Hwa} and Park, {Jong Wan} and Lee, {Jeong O.} and Choi, {Jung Bum} and Park, {Se Il} and Kim, {Ju Jin}",

year = "2000",

month = aug,

doi = "10.1143/jjap.39.4826",

language = "English",

volume = "39",

pages = "4826--4829",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8",

}

Memory effect in an aluminum single-electron floating-node memory cell. / Kim, Jinhee; Oh, Sangchul; Yoo, Kyung Hwa; Park, Jong Wan; Lee, Jeong O.; Choi, Jung Bum; Park, Se Il; Kim, Ju Jin.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 8, 08.2000, p. 4826-4829.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Memory effect in an aluminum single-electron floating-node memory cell

AU - Kim, Jinhee

AU - Oh, Sangchul

AU - Yoo, Kyung Hwa

AU - Park, Jong Wan

AU - Lee, Jeong O.

AU - Choi, Jung Bum

AU - Park, Se Il

AU - Kim, Ju Jin

PY - 2000/8

Y1 - 2000/8

N2 - We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.

AB - We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.

UR - http://www.scopus.com/inward/record.url?scp=0034245078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034245078&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.4826

DO - 10.1143/jjap.39.4826

M3 - Article

AN - SCOPUS:0034245078

VL - 39

SP - 4826

EP - 4829

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8

ER -

Memory effect in an aluminum single-electron floating-node memory cell

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this