Abstract
We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.
| Original language | English |
|---|---|
| Pages (from-to) | 4826-4829 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 8 |
| Publication status | Published - 2000 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Memory effect in an aluminum single-electron floating-node memory cell. / Kim, Jinhee; Oh, Sangchul; Yoo, Kyung Hwa; Park, Jong Wan; Lee, Jeong O.; Choi, Jung Bum; Park, Se Il; Kim, Ju Jin.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 8, 01.08.2000, p. 4826-4829.Research output: Contribution to journal › Article
TY - JOUR
T1 - Memory effect in an aluminum single-electron floating-node memory cell
AU - Kim, Jinhee
AU - Oh, Sangchul
AU - Yoo, Kyung Hwa
AU - Park, Jong Wan
AU - Lee, Jeong O.
AU - Choi, Jung Bum
AU - Park, Se Il
AU - Kim, Ju Jin
PY - 2000/8/1
Y1 - 2000/8/1
N2 - We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.
AB - We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.
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UR - http://www.scopus.com/inward/citedby.url?scp=0034245078&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0034245078
VL - 39
SP - 4826
EP - 4829
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
ER -