Abstract
We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.
| Original language | English |
|---|---|
| Pages (from-to) | 4826-4829 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2000 Aug |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Kim, J., Oh, S., Yoo, K. H., Park, J. W., Lee, J. O., Choi, J. B., Park, S. I., & Kim, J. J. (2000). Memory effect in an aluminum single-electron floating-node memory cell. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(8), 4826-4829. https://doi.org/10.1143/jjap.39.4826