Memory effects based on random networks of single-walled carbon nanotubes

Keun Woo Lee, Kon Yi Heo, Kyung Min Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have fabricated memory devices based on random networks of single-walled carbon nanotubes (SWNTs) on a glass substrate. The characteristics of the nonvolatile memory were investigated as a function of gate voltage, pulse time, and temperature. The program/erase window was greater than approximately 3.2V. The gate voltage sensitivity of the erase speed was greater (∼1.9 times) than that of the program speed. The activation energy was about 0.273eV. The mechanism could be explained from the polarization of water molecules, and may provide an important insight into the program/erase operation of memory devices. We have also discussed a fast erase speed due to a work function difference and oxide trapped charges.

Original languageEnglish
Article number405210
JournalNanotechnology
Volume20
Issue number40
DOIs
Publication statusPublished - 2009 Oct 12

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Memory effects based on random networks of single-walled carbon nanotubes'. Together they form a unique fingerprint.

  • Cite this