Memory effects of all-solution-processed oxide thin-film transistors using ZnO nanoparticles

Jung Hyeon Bae, Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Non-volatile memory effects of an all-solution-processed oxide thin-film transistor (TFT) with ZnO nanoparticles (NPs) as the charge-trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO2 gate dielectric. ZnO NPs were used as the charge-trapping site at the gate-insulator-channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge-trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.

Original languageEnglish
Pages (from-to)404-409
Number of pages6
JournalJournal of the Society for Information Display
Volume19
Issue number5
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Thin film transistors
Charge trapping
Oxide films
transistors
trapping
Nanoparticles
Data storage equipment
nanoparticles
oxides
thin films
Gate dielectrics
Hysteresis
Electronic equipment
Display devices
hysteresis
insulators
Electrodes
electrodes
Electrons
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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Memory effects of all-solution-processed oxide thin-film transistors using ZnO nanoparticles. / Bae, Jung Hyeon; Kim, Gun Hee; Jeong, Woong Hee; Kim, Hyun Jae.

In: Journal of the Society for Information Display, Vol. 19, No. 5, 01.05.2011, p. 404-409.

Research output: Contribution to journalArticle

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