Non-volatile memory effects of an all-solution-processed oxide thin-film transistor (TFT) with ZnO nanoparticles (NPs) as the charge-trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO2 gate dielectric. ZnO NPs were used as the charge-trapping site at the gate-insulator-channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge-trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering