Memory effects of all-solution-processed oxide thin-film transistors using ZnO nanoparticles

Jung Hyeon Bae, Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Non-volatile memory effects of an all-solution-processed oxide thin-film transistor (TFT) with ZnO nanoparticles (NPs) as the charge-trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO2 gate dielectric. ZnO NPs were used as the charge-trapping site at the gate-insulator-channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge-trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.

Original languageEnglish
Pages (from-to)404-409
Number of pages6
JournalJournal of the Society for Information Display
Issue number5
Publication statusPublished - 2011 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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