We investigated the memristive switching behavior in bismuth-antimony alloy (Bi1-xSbx) single nanowire devices at 0.1 ≤ x ≤ 0.42. At 0.15 ≤ x ≤ 0.42, most Bi1-xSbx single nanowire devices exhibited bipolar resistive switching (RS) behavior with on/off ratios of approximately 104 and narrow variations in switching parameters. Moreover, the resistance values in the low-resistance state (LRS) were insensitive to x. On the other hand, at 0.1 ≤ x ≤ 0.15, some Bi1-xSbx single nanowire devices showed complementary RS-like behavior, which was ascribed to asymmetric contact properties. Transmission electron microscopy and elemental mapping images of Bi, Sb, and O obtained from the cross sections of the Bi1-xSbx single nanowire devices, which were cut before and after RS, revealed that the mobile species was Sb ions, and the migration of the Sb ions to the nanowire surface brought the switch to LRS. In addition, we demonstrated that two types of synaptic plasticity, namely, short-term plasticity and long-term potentiation, could be implemented in Bi1-xSbx nanowires by applying a sequence of voltage pulses with different repetition intervals.
Bibliographical noteFunding Information:
This work was financially supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (Grant Nos. 2011-0017486 and 2012R1A4A1029061).
© 2016 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)