Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO 2/Pt cell

Kyung Jean Yoon, Min Hwan Lee, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Sora Han, Jung Ho Yoon, Kyung Min Kim, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review


A tri-stable memristive switching was demonstrated on a Pt/TiO 2/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell which was then followed by unipolar reset switching. It was postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented in this article was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO 2/TiO 2-x/Pt cell.

Original languageEnglish
Article number185202
Issue number18
Publication statusPublished - 2012 May 11

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


Dive into the research topics of 'Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO 2/Pt cell'. Together they form a unique fingerprint.

Cite this