Abstract
Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The behavior of the MaCE reaction in diluted H 2 O 2 was compared with that of a conventional etchant of HF/H 2 O 2 /H 2 O mixture (FPM). Herein we first report that a pyramidal structure on Ge (0 0 1) can be prepared by MaCE in dilute H 2 O 2 solution, without the use of HF. Contrastingly, an octagonal trench structure was prepared by 4/5/1 FPM treatment of Ge (0 0 1) surface. This octagonal structure consisted of a square base, four large facets connected to the base, and other four small facets adjacent to the four large facets, which were considered to be (0 0 1), {1 1 0}, and {1 1 1}, respectively. The octagonal trench was formed as a result of the difference in etch rate of Ge depending on the orientation: {1 0 0} > {1 1 0} > {1 1 1}. Ge surfaces treated by MaCE exhibited improved solar cell efficiency due to their improved light absorption, which led to significant increases in the cells' short circuit current and fill factor. The results suggest that optimized MaCE procedures can be an effective method to improve the performance of Ge-based photovoltaic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 129-138 |
| Number of pages | 10 |
| Journal | Applied Surface Science |
| Volume | 371 |
| DOIs | |
| Publication status | Published - 2016 May 15 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Metal-assisted chemical etching of Ge surface and its effect on photovoltaic devices. / Lee, Seunghyo; Choo, Hyeokseong; Kim, Changheon; Oh, Eunseok; Seo, Dongwan; Lim, Sangwoo.
In: Applied Surface Science, Vol. 371, 15.05.2016, p. 129-138.Research output: Contribution to journal › Article
TY - JOUR
T1 - Metal-assisted chemical etching of Ge surface and its effect on photovoltaic devices
AU - Lee, Seunghyo
AU - Choo, Hyeokseong
AU - Kim, Changheon
AU - Oh, Eunseok
AU - Seo, Dongwan
AU - Lim, Sangwoo
PY - 2016/5/15
Y1 - 2016/5/15
N2 - Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The behavior of the MaCE reaction in diluted H 2 O 2 was compared with that of a conventional etchant of HF/H 2 O 2 /H 2 O mixture (FPM). Herein we first report that a pyramidal structure on Ge (0 0 1) can be prepared by MaCE in dilute H 2 O 2 solution, without the use of HF. Contrastingly, an octagonal trench structure was prepared by 4/5/1 FPM treatment of Ge (0 0 1) surface. This octagonal structure consisted of a square base, four large facets connected to the base, and other four small facets adjacent to the four large facets, which were considered to be (0 0 1), {1 1 0}, and {1 1 1}, respectively. The octagonal trench was formed as a result of the difference in etch rate of Ge depending on the orientation: {1 0 0} > {1 1 0} > {1 1 1}. Ge surfaces treated by MaCE exhibited improved solar cell efficiency due to their improved light absorption, which led to significant increases in the cells' short circuit current and fill factor. The results suggest that optimized MaCE procedures can be an effective method to improve the performance of Ge-based photovoltaic devices.
AB - Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The behavior of the MaCE reaction in diluted H 2 O 2 was compared with that of a conventional etchant of HF/H 2 O 2 /H 2 O mixture (FPM). Herein we first report that a pyramidal structure on Ge (0 0 1) can be prepared by MaCE in dilute H 2 O 2 solution, without the use of HF. Contrastingly, an octagonal trench structure was prepared by 4/5/1 FPM treatment of Ge (0 0 1) surface. This octagonal structure consisted of a square base, four large facets connected to the base, and other four small facets adjacent to the four large facets, which were considered to be (0 0 1), {1 1 0}, and {1 1 1}, respectively. The octagonal trench was formed as a result of the difference in etch rate of Ge depending on the orientation: {1 0 0} > {1 1 0} > {1 1 1}. Ge surfaces treated by MaCE exhibited improved solar cell efficiency due to their improved light absorption, which led to significant increases in the cells' short circuit current and fill factor. The results suggest that optimized MaCE procedures can be an effective method to improve the performance of Ge-based photovoltaic devices.
UR - http://www.scopus.com/inward/record.url?scp=84960097570&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84960097570&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2016.02.197
DO - 10.1016/j.apsusc.2016.02.197
M3 - Article
AN - SCOPUS:84960097570
VL - 371
SP - 129
EP - 138
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -