Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers

Jungwoo Oh, Sanjay K. Banerjee, Joe C. Campbell

Research output: Contribution to journalConference article

Abstract

Integration of photonic devices into Si integrated circuits (ICs) has the potential to impact low-cost optical communications applications and optical interconnects. The primary advantages of a Si-based approach to optoelectronic devices are low-cost manufacturable optical components and easily-mass produced optoelectronic integrate circuits (OEICs). This paper reports on a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate is reported. As such, the Ge epitaxial layers are grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.

Original languageEnglish
Pages (from-to)855-856
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 2003 Dec 9
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: 2003 Oct 262003 Oct 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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