Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers

Jungwoo Oh; Sanjay K. Banerjee; Joe C. Campbell

Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers

Jungwoo Oh, Sanjay K. Banerjee, Joe C. Campbell

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Integration of photonic devices into Si integrated circuits (ICs) has the potential to impact low-cost optical communications applications and optical interconnects. The primary advantages of a Si-based approach to optoelectronic devices are low-cost manufacturable optical components and easily-mass produced optoelectronic integrate circuits (OEICs). This paper reports on a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate is reported. As such, the Ge epitaxial layers are grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.

Original language	English
Pages (from-to)	855-856
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
Publication status	Published - 2003
Event	2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: 2003 Oct 26 → 2003 Oct 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers",

abstract = "Integration of photonic devices into Si integrated circuits (ICs) has the potential to impact low-cost optical communications applications and optical interconnects. The primary advantages of a Si-based approach to optoelectronic devices are low-cost manufacturable optical components and easily-mass produced optoelectronic integrate circuits (OEICs). This paper reports on a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate is reported. As such, the Ge epitaxial layers are grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.",

author = "Jungwoo Oh and Banerjee, {Sanjay K.} and Campbell, {Joe C.}",

year = "2003",

language = "English",

volume = "2",

pages = "855--856",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE LEOS Annual Meeting Conference Proceedings ; Conference date: 26-10-2003 Through 30-10-2003",

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T1 - Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers

AU - Oh, Jungwoo

AU - Banerjee, Sanjay K.

AU - Campbell, Joe C.

PY - 2003

Y1 - 2003

N2 - Integration of photonic devices into Si integrated circuits (ICs) has the potential to impact low-cost optical communications applications and optical interconnects. The primary advantages of a Si-based approach to optoelectronic devices are low-cost manufacturable optical components and easily-mass produced optoelectronic integrate circuits (OEICs). This paper reports on a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate is reported. As such, the Ge epitaxial layers are grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.

AB - Integration of photonic devices into Si integrated circuits (ICs) has the potential to impact low-cost optical communications applications and optical interconnects. The primary advantages of a Si-based approach to optoelectronic devices are low-cost manufacturable optical components and easily-mass produced optoelectronic integrate circuits (OEICs). This paper reports on a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate is reported. As such, the Ge epitaxial layers are grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.

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M3 - Conference article

AN - SCOPUS:0344897274

SN - 1092-8081

VL - 2

SP - 855

EP - 856

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2003 IEEE LEOS Annual Meeting Conference Proceedings

Y2 - 26 October 2003 through 30 October 2003

ER -

Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers

Abstract

All Science Journal Classification (ASJC) codes

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