Integration of photonic devices into Si integrated circuits (ICs) has the potential to impact low-cost optical communications applications and optical interconnects. The primary advantages of a Si-based approach to optoelectronic devices are low-cost manufacturable optical components and easily-mass produced optoelectronic integrate circuits (OEICs). This paper reports on a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate is reported. As such, the Ge epitaxial layers are grown using a cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|Publication status||Published - 2003 Dec 9|
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Control and Systems Engineering
- Electrical and Electronic Engineering