Metal-Germanium-Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

Jungwoo Oh, Sanjay K. Banerjee, Joe C. Campbell

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)

Abstract

We report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate. Amorphous Ge was used to increase the Schottky barrier height, which resulted in a reduction of the dark current by more than two orders of magnitude. The dark current measured on a photodetector having 1 μm finger width and 2 μm spacing with 25 × 50 μm 2 active area was 7.5 μA at 3 V. At the wavelength of 1.3 μm, the external quantum efficiency was 14.3% (0.15 A/W) without an antireflecting coating. At reverse biases of 1, 2, 3, and 4 V, the 3-dB bandwidth was found to be 1.5,2.8,3.1, and 4.3 GHz, respectively.

Original languageEnglish
Pages (from-to)581-583
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number2
DOIs
Publication statusPublished - 2004 Feb

Bibliographical note

Funding Information:
Manuscript received August 6, 2003; revised September 7, 2003. This work was supported by the Motorola SABA program and by DARPA CHIPS Center. The authors are with the The University of Texas at Austin, Austin, TX 78712 USA (e-mail: jcc@mail.utexas.edu). Digital Object Identifier 10.1109/LPT.2003.822258

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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