Metal-Germanium-Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

Jungwoo Oh, Sanjay K. Banerjee, Joe C. Campbell

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

We report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate. Amorphous Ge was used to increase the Schottky barrier height, which resulted in a reduction of the dark current by more than two orders of magnitude. The dark current measured on a photodetector having 1 μm finger width and 2 μm spacing with 25 × 50 μm 2 active area was 7.5 μA at 3 V. At the wavelength of 1.3 μm, the external quantum efficiency was 14.3% (0.15 A/W) without an antireflecting coating. At reverse biases of 1, 2, 3, and 4 V, the 3-dB bandwidth was found to be 1.5,2.8,3.1, and 4.3 GHz, respectively.

Original languageEnglish
Pages (from-to)581-583
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number2
DOIs
Publication statusPublished - 2004 Feb 1

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Germanium
Dark currents
Photodetectors
dark current
photometers
germanium
Metals
augmentation
Epitaxial layers
Quantum efficiency
metals
quantum efficiency
spacing
bandwidth
Bandwidth
coatings
Coatings
Wavelength
Substrates
wavelengths

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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Metal-Germanium-Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers. / Oh, Jungwoo; Banerjee, Sanjay K.; Campbell, Joe C.

In: IEEE Photonics Technology Letters, Vol. 16, No. 2, 01.02.2004, p. 581-583.

Research output: Contribution to journalArticle

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