Metal-Germanium-Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

Jungwoo Oh; Sanjay K. Banerjee; Joe C. Campbell

doi:10.1109/LPT.2003.822258

Metal-Germanium-Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

Jungwoo Oh, Sanjay K. Banerjee, Joe C. Campbell

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

We report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate. Amorphous Ge was used to increase the Schottky barrier height, which resulted in a reduction of the dark current by more than two orders of magnitude. The dark current measured on a photodetector having 1 μm finger width and 2 μm spacing with 25 × 50 μm ² active area was 7.5 μA at 3 V. At the wavelength of 1.3 μm, the external quantum efficiency was 14.3% (0.15 A/W) without an antireflecting coating. At reverse biases of 1, 2, 3, and 4 V, the 3-dB bandwidth was found to be 1.5,2.8,3.1, and 4.3 GHz, respectively.

Original language	English
Pages (from-to)	581-583
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2003.822258
Publication status	Published - 2004 Feb

Bibliographical note

Funding Information:
Manuscript received August 6, 2003; revised September 7, 2003. This work was supported by the Motorola SABA program and by DARPA CHIPS Center. The authors are with the The University of Texas at Austin, Austin, TX 78712 USA (e-mail: jcc@mail.utexas.edu). Digital Object Identifier 10.1109/LPT.2003.822258

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2003.822258

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title = "Metal-Germanium-Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers",

abstract = "We report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate. Amorphous Ge was used to increase the Schottky barrier height, which resulted in a reduction of the dark current by more than two orders of magnitude. The dark current measured on a photodetector having 1 μm finger width and 2 μm spacing with 25 × 50 μm 2 active area was 7.5 μA at 3 V. At the wavelength of 1.3 μm, the external quantum efficiency was 14.3% (0.15 A/W) without an antireflecting coating. At reverse biases of 1, 2, 3, and 4 V, the 3-dB bandwidth was found to be 1.5,2.8,3.1, and 4.3 GHz, respectively.",

author = "Jungwoo Oh and Banerjee, {Sanjay K.} and Campbell, {Joe C.}",

note = "Funding Information: Manuscript received August 6, 2003; revised September 7, 2003. This work was supported by the Motorola SABA program and by DARPA CHIPS Center. The authors are with the The University of Texas at Austin, Austin, TX 78712 USA (e-mail: jcc@mail.utexas.edu). Digital Object Identifier 10.1109/LPT.2003.822258",

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AU - Banerjee, Sanjay K.

AU - Campbell, Joe C.

N1 - Funding Information: Manuscript received August 6, 2003; revised September 7, 2003. This work was supported by the Motorola SABA program and by DARPA CHIPS Center. The authors are with the The University of Texas at Austin, Austin, TX 78712 USA (e-mail: jcc@mail.utexas.edu). Digital Object Identifier 10.1109/LPT.2003.822258

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N2 - We report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate. Amorphous Ge was used to increase the Schottky barrier height, which resulted in a reduction of the dark current by more than two orders of magnitude. The dark current measured on a photodetector having 1 μm finger width and 2 μm spacing with 25 × 50 μm 2 active area was 7.5 μA at 3 V. At the wavelength of 1.3 μm, the external quantum efficiency was 14.3% (0.15 A/W) without an antireflecting coating. At reverse biases of 1, 2, 3, and 4 V, the 3-dB bandwidth was found to be 1.5,2.8,3.1, and 4.3 GHz, respectively.

AB - We report a metal-Ge-metal photodetector fabricated on a Ge epitaxial layer grown on Si (100) substrate. Amorphous Ge was used to increase the Schottky barrier height, which resulted in a reduction of the dark current by more than two orders of magnitude. The dark current measured on a photodetector having 1 μm finger width and 2 μm spacing with 25 × 50 μm 2 active area was 7.5 μA at 3 V. At the wavelength of 1.3 μm, the external quantum efficiency was 14.3% (0.15 A/W) without an antireflecting coating. At reverse biases of 1, 2, 3, and 4 V, the 3-dB bandwidth was found to be 1.5,2.8,3.1, and 4.3 GHz, respectively.

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Metal-Germanium-Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

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All Science Journal Classification (ASJC) codes

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