Metal-Organic Chemical Vapor Deposition of Semiconducting III/VI In2Se3 Thin Films from the Single-Source Precursor: In[SeC(SiMe3)3]3

Jinwoo Cheon; John Arnold; Yu Kin-Man; Edith D. Bourret

doi:10.1021/cm00060a014

Metal-Organic Chemical Vapor Deposition of Semiconducting III/VI In₂Se₃ Thin Films from the Single-Source Precursor: In[SeC(SiMe₃)₃]₃

Jinwoo Cheon, John Arnold, Yu Kin-Man, Edith D. Bourret

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Thin films of In₂Se₃ have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe₃)s]₃ as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In₂Se₃ films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).

Original language	English
Pages (from-to)	2273-2276
Number of pages	4
Journal	Chemistry of Materials
Volume	7
Issue number	12
DOIs	https://doi.org/10.1021/cm00060a014
Publication status	Published - 1995 Dec

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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10.1021/cm00060a014

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abstract = "Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe3)s]3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).",

author = "Jinwoo Cheon and John Arnold and Yu Kin-Man and Bourret, {Edith D.}",

year = "1995",

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doi = "10.1021/cm00060a014",

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T2 - In[SeC(SiMe3)3]3

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AU - Arnold, John

AU - Kin-Man, Yu

AU - Bourret, Edith D.

PY - 1995/12

Y1 - 1995/12

N2 - Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe3)s]3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).

AB - Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe3)s]3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).

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Metal-Organic Chemical Vapor Deposition of Semiconducting III/VI In₂Se₃ Thin Films from the Single-Source Precursor: In[SeC(SiMe₃)₃]₃

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