Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe3)s]3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Chemistry