Metal-Organic Chemical Vapor Deposition of Semiconducting III/VI In2Se3 Thin Films from the Single-Source Precursor

In[SeC(SiMe3)3]3

Jinwoo Cheon, John Arnold, Yu Kin-Man, Edith D. Bourret

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe3)s]3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).

Original languageEnglish
Pages (from-to)2273-2276
Number of pages4
JournalChemistry of Materials
Volume7
Issue number12
DOIs
Publication statusPublished - 1995 Jan 1

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Organic Chemicals
Organic chemicals
Chemical vapor deposition
Metals
Thin films
Rutherford backscattering spectroscopy
Stoichiometry
Crystalline materials
X ray diffraction
Scanning electron microscopy
indium triselenide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

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abstract = "Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe3)s]3 as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).",
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Metal-Organic Chemical Vapor Deposition of Semiconducting III/VI In2Se3 Thin Films from the Single-Source Precursor : In[SeC(SiMe3)3]3. / Cheon, Jinwoo; Arnold, John; Kin-Man, Yu; Bourret, Edith D.

In: Chemistry of Materials, Vol. 7, No. 12, 01.01.1995, p. 2273-2276.

Research output: Contribution to journalArticle

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