Metal-semiconductor contact behavior of solution-processed ZnSnO thin film transistors

Youngmin Jeong, Keunkyu Song, Kyoohee Woo, Taehwan Jun, Yangho Jung, Jooho Moon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

Original languageEnglish
Pages (from-to)401-407
Number of pages7
JournalKorean Journal of Materials Research
Volume20
Issue number8
DOIs
Publication statusPublished - 2010 Dec 9

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
Contacts (fluid mechanics)
Metals
Semiconductor materials
Electrodes
Oxide films
Zinc Acetate
Nanopores
Tin
Ohmic contacts
Spin coating
Contact resistance
stannic oxide
Surface structure
Sol-gels
Masks
Electric lines
Microscopic examination

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Jeong, Youngmin ; Song, Keunkyu ; Woo, Kyoohee ; Jun, Taehwan ; Jung, Yangho ; Moon, Jooho. / Metal-semiconductor contact behavior of solution-processed ZnSnO thin film transistors. In: Korean Journal of Materials Research. 2010 ; Vol. 20, No. 8. pp. 401-407.
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Metal-semiconductor contact behavior of solution-processed ZnSnO thin film transistors. / Jeong, Youngmin; Song, Keunkyu; Woo, Kyoohee; Jun, Taehwan; Jung, Yangho; Moon, Jooho.

In: Korean Journal of Materials Research, Vol. 20, No. 8, 09.12.2010, p. 401-407.

Research output: Contribution to journalArticle

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