Metallic conduction induced by direct anion site doping in layered SnSe 2

Sang Il Kim, Sungwoo Hwang, Se Yun Kim, Woo Jin Lee, Doh Won Jung, Kyoung Seok Moon, Hee Jung Park, Young Jin Cho, Yong Hee Cho, Jung Hwa Kim, Dong Jin Yun, Kyu Hyoung Lee, In Taek Han, Kimoon Lee, Yoonchul Sohn

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe 2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ∼10 20 cm ' '3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ∼170 S·cm ' '1 from ∼1.7 S·cm ' '1 for non-doped SnSe 2. When the carrier concentration exceeds ∼10 19 cm ' '3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe 2.

Original languageEnglish
Article number19733
JournalScientific reports
Volume6
DOIs
Publication statusPublished - 2016 Jan 21

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anions
conduction
intercalation
electrons
insulators
engineering
occurrences
electrostatics
orbitals
conductivity
metals
ions

All Science Journal Classification (ASJC) codes

  • General

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Kim, S. I., Hwang, S., Kim, S. Y., Lee, W. J., Jung, D. W., Moon, K. S., ... Sohn, Y. (2016). Metallic conduction induced by direct anion site doping in layered SnSe 2. Scientific reports, 6, [19733]. https://doi.org/10.1038/srep19733
Kim, Sang Il ; Hwang, Sungwoo ; Kim, Se Yun ; Lee, Woo Jin ; Jung, Doh Won ; Moon, Kyoung Seok ; Park, Hee Jung ; Cho, Young Jin ; Cho, Yong Hee ; Kim, Jung Hwa ; Yun, Dong Jin ; Lee, Kyu Hyoung ; Han, In Taek ; Lee, Kimoon ; Sohn, Yoonchul. / Metallic conduction induced by direct anion site doping in layered SnSe 2. In: Scientific reports. 2016 ; Vol. 6.
@article{27e122638ea14796b7c569f76c2c9672,
title = "Metallic conduction induced by direct anion site doping in layered SnSe 2",
abstract = "The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe 2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ∼10 20 cm ' '3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ∼170 S·cm ' '1 from ∼1.7 S·cm ' '1 for non-doped SnSe 2. When the carrier concentration exceeds ∼10 19 cm ' '3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe 2.",
author = "Kim, {Sang Il} and Sungwoo Hwang and Kim, {Se Yun} and Lee, {Woo Jin} and Jung, {Doh Won} and Moon, {Kyoung Seok} and Park, {Hee Jung} and Cho, {Young Jin} and Cho, {Yong Hee} and Kim, {Jung Hwa} and Yun, {Dong Jin} and Lee, {Kyu Hyoung} and Han, {In Taek} and Kimoon Lee and Yoonchul Sohn",
year = "2016",
month = "1",
day = "21",
doi = "10.1038/srep19733",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Kim, SI, Hwang, S, Kim, SY, Lee, WJ, Jung, DW, Moon, KS, Park, HJ, Cho, YJ, Cho, YH, Kim, JH, Yun, DJ, Lee, KH, Han, IT, Lee, K & Sohn, Y 2016, 'Metallic conduction induced by direct anion site doping in layered SnSe 2', Scientific reports, vol. 6, 19733. https://doi.org/10.1038/srep19733

Metallic conduction induced by direct anion site doping in layered SnSe 2. / Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo Jin; Jung, Doh Won; Moon, Kyoung Seok; Park, Hee Jung; Cho, Young Jin; Cho, Yong Hee; Kim, Jung Hwa; Yun, Dong Jin; Lee, Kyu Hyoung; Han, In Taek; Lee, Kimoon; Sohn, Yoonchul.

In: Scientific reports, Vol. 6, 19733, 21.01.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Metallic conduction induced by direct anion site doping in layered SnSe 2

AU - Kim, Sang Il

AU - Hwang, Sungwoo

AU - Kim, Se Yun

AU - Lee, Woo Jin

AU - Jung, Doh Won

AU - Moon, Kyoung Seok

AU - Park, Hee Jung

AU - Cho, Young Jin

AU - Cho, Yong Hee

AU - Kim, Jung Hwa

AU - Yun, Dong Jin

AU - Lee, Kyu Hyoung

AU - Han, In Taek

AU - Lee, Kimoon

AU - Sohn, Yoonchul

PY - 2016/1/21

Y1 - 2016/1/21

N2 - The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe 2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ∼10 20 cm ' '3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ∼170 S·cm ' '1 from ∼1.7 S·cm ' '1 for non-doped SnSe 2. When the carrier concentration exceeds ∼10 19 cm ' '3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe 2.

AB - The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe 2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ∼10 20 cm ' '3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ∼170 S·cm ' '1 from ∼1.7 S·cm ' '1 for non-doped SnSe 2. When the carrier concentration exceeds ∼10 19 cm ' '3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe 2.

UR - http://www.scopus.com/inward/record.url?scp=84955584830&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955584830&partnerID=8YFLogxK

U2 - 10.1038/srep19733

DO - 10.1038/srep19733

M3 - Article

AN - SCOPUS:84955584830

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 19733

ER -

Kim SI, Hwang S, Kim SY, Lee WJ, Jung DW, Moon KS et al. Metallic conduction induced by direct anion site doping in layered SnSe 2. Scientific reports. 2016 Jan 21;6. 19733. https://doi.org/10.1038/srep19733